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Conference Publication

A novel 350 nm CMOS optical receiver based on a current-assisted photodiode detector

Host Publication: SPIE Photonics West 2019

Authors: S. Boulanger, H. Ingelberts, T. Van den Dries, A. Gasser and M. Kuijk

UsePubPlace: San Francisco, California, USA

Publisher: SPIE

Publication Date: Mar. 2019

Number of Pages: 8


Abstract:

Integrating an optical receiver in CMOS optimized for near infrared light (NIR) remains appealing but at the same time challenging due to the deep photon penetration depth. A novel implementation of a light detector is demonstrated in a 350 nm CMOS technology, whereby, through adding a majority current with associated electric field distribution in the silicon detection volume, photo-generated minority electrons get quickly guided to the center of this volume. In the center, a tiny PN junction collects the photo-electrons. The detection speed subsequently increases, NIR light is received with improved responsivity and the detector capacitance gets drastically reduced to femtofarad level. The latter improvement also increases signal-to-noise performance and can be used to trade-off with other design parameters to improve global performance of the opto-electronic system. An optical datacom receiver at 1 Gbps is demonstrated at NIR-wavelength for proving useful Current-Assisted Photodiode detector operation in an actual CMOS system.

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Current ETRO Authors

Ir. Sven Boulanger

+32 (0)02 629 278

sboulang@etrovub.be

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Mr. Hans Ingelberts

+32 (0)02 629 131

hingelbe@etrovub.be

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Mr. Thomas Van den Dries

+32 (0)2 629 2930

tvandend@etrovub.be

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Prof. Maarten Kuijk

+32 (0)02 629 299

mkuijk@etrovub.be

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