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Journal Publication

Characterization and Modeling of Hot Carrier Degradation in N-Channel Gate-All-Around Nanowire FETs

This publication appears in: IEEE Transactions on Electron Devices

Authors: C. Gupta, A. Gupta, S. Tuli, E. Bury, B. Parvais and A. Dixit

Volume: 67

Issue: 1

Pages: 4-10

Publication Date: Jan. 2020

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Mr. Bertrand Parvais

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bparvais@etrovub.be

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