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Conference Publication

GaAs-based grating system for Q-switching on the basis of IMOS structure

Host Publication: Semiconductor Electronics (ICSE)

Authors: S. Rabbaa, J. Stiens, W. Vandermeiren and G. Shkerdin

Publisher: IEEE

Publication Date: Sep. 2016

Number of Pages: 4

ISBN: 978-1-5090-2384-4


Abstract:

GSolver software is used to optimize the parameters of a GaAs-based layers structure for modulating the reflectivity of light. This structure can be used in an Integrated Mirror Optical Switch (IMOS) for the Q-switching technology. A system of low doped GaAs and highly doped AlGaAs structure is built on a binary diffraction grating composed of germanium and gold. The diffraction efficiency is determined with and without the existence of free carriers in the highly doped layer. The impact of the sheet charge density at the interface of the heterostructure is considered in determining of the diffraction efficiency. At the end of the study, the structure parameters and thicknesses are determined for a high sensitive device.

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Prof. Dr. Ir. Johan Stiens

+32 (0)02 629 239

jstiens@etrovub.be

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Dr. Werner Vandermeiren

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wvanderm@etrovub.be

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