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Journal Publication

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

This publication appears in: Microelectronics Reliability

Authors: B. Kaczer, J. Franco, P. Weckx, P. J Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten and B. Parvais

Volume: 81

Pages: 186-194

Publication Year: 2018

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Mr. Bertrand Parvais

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bparvais@etrovub.be

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