Characterization and modeling of n-channel bulk FinFETs from DC to high frequency
Host Publication: 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
Authors: R. Singh, P. Kushwaha, S. Ghosh, B. Parvais, Y. S. Chauhan and A. Dixit
Publisher: Institute of Electrical and Electronics Engineers Inc
Publication Date: Dec. 2017
Number of Pages: 2
RF CMOS technology provides a platform for the production of analog, digital and RF circuits on a single chip for futuristic high-level integration. This facilitates the need for a robust compact model for RF FinFETs to study the circuits in a precise and convenient way. In this paper, we have characterized 14-nm N-channel bulk FinFETs by performing two-port S-parameter measurements. Further, BSIM-CMG model for common multiple gate devices is used to accurately capture the RF behavior of the device.