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Conference Publication

PD-SOI: Enabling Adaptive RF Front-End Modules

Host Publication: SOI-3D-Subthreshold Microelectronics Unified Conference

Authors: B. van Liempd, J. Craninckx and P. Wambacq

Publisher: IEEE

Publication Date: Oct. 2018

Number of Pages: 2

ISBN: 978-1-5386-7626-4


Abstract:

Partially depleted silicon-on-insulator (PD-SOI) is a key enabling technology for adaptively tuned RF front-end modules (FEM). Unlike bulk CMOS, thanks to SOI’s insulating buried-oxide (BOX) layer, switched capacitor banks can allow for large voltage swing and exhibit a high small-signal linearity. This in turn enables LTE standard-proof power and linearity capabilities for tunable duplexers based on electrical-balance duplexers (EBDs) and N-path filters. These building blocks help to reduce the amount of SAW filters typically required in LTE handsets and enable in-band full-duplex (IBFD). This paper presents an overview of work related to tunable FEM in 180nm PD-SOI technology.

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+32 (0)16 281 218

pwambacq@etrovub.be

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