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Publication 4972 Background

Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instabi...

Publication 4963 Background

Perspectives on GaN MISHEMT Power Amplifer vs Positive Gate Bias Instability

Publication 4866 Background

A 24-31GHz Compact Low-Power Complex Impedance Sensor for Beamforming Transmi...

Publication 443 Background

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs ...

Publication 455 Background

Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation

Publication 2010 Background

DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm ...

Publication 2157 Background

GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu...

Publication 2156 Background

From 5G to 6G: Will compound semiconductors make the difference?

Publication 2098 Background

Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs

Publication 2079 Background

(Invited) Advanced Transistors for High Frequency Applications