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Publication 4376 Background
20 Mar 2023
RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si
Publication 4505 Background
30 Nov 2022
GaN-on-Si technology for modern wireless communication systems: Optimisation ...
Publication 4254 Background
18 Nov 2022
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs ...
Publication 4195 Background
29 Aug 2022
Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN...
Publication 4163 Background
03 Apr 2022
Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation
Publication 4331 Background
30 Nov 2021
III-V/III-N technologies for next generation high-capacity wireless communica...
Publication 4330 Background
30 Nov 2021
Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, M...
Publication 4036 Background
27 Sep 2021
Transistor modelling for mm-Wave technology pathfinding
Publication 13 Background
Generic - Fundamental Technology Stamp
10 Jan 2021
DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm ...
Publication 3883 Background
12 Dec 2020
GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu...
Publication 136 Background
Generic - Fundamental Technology Stamp
03 Nov 2020
From 5G to 6G: Will compound semiconductors make the difference?
Publication 72 Background
Generic - Fundamental Technology Stamp
31 Oct 2020
Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs