Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability
Yu, H, ElKashlan, R, Tsai, M-C, Yang, Y, Guenach, M, Kuo, Y-C, Yadav, S, Sullivan, BO, Rathi, A, Gupta, A, Xiao, D, Desset, C, Alian, A, Peralagu, U, Afanasiev, V, Wu, T-L, Parvais, B & Collaert, N 2025, Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. in 2025 IEEE International Reliability Physics Symposium (IRPS). 2025 edn, IEEE International Reliability Physics Symposium Proceedings, IEEE, Monterey, CA, USA, pp. 11C.1-1-11C.1-6. https://doi.org/10.1109/IRPS48204.2025.10983812
Perspectives on GaN MISHEMT Power Amplifer vs Positive Gate Bias Instability
Yu, H, ElKashlan, R, Tsai, M-C, Yang, Y, Guenach, M, Kuo, Y-C, Yadav, S, Sullivan, BO, Rathi, A, Gupta, A, Xiao, D, Desset, C, Alian, A, Peralagu, U, Afanasiev, V, Wu, T-L, Parvais, B & Collaert, N 2025, Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. in 2025 IEEE International Reliability Physics Symposium (IRPS). 2025 edn, IEEE International Reliability Physics Symposium Proceedings, IEEE, Monterey, CA, USA, pp. 11C.1-1-11C.1-6. https://doi.org/10.1109/IRPS48204.2025.10983812