Member
Publications
 
 
 
Filter by  
 
No filters to apply.
 
2023 
RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

ElKashlan, R, Khaled, A, Rodriguez, R, Sibaja-Hernandez, A, Peralagu, U, Alian, A, Collaert, N , Wambacq, P & Parvais, B 2023, ' RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si ', International Journal of Microwave and Wireless Technologies , vol. 67, pp. 1-10.

GaN-on-Si technology for modern wireless communication systems: Optimisation insight using RF characterisation

ElKashlan, RY 2023, ' GaN-on-Si technology for modern wireless communication systems: Optimisation insight using RF characterisation ', Vrije Universiteit Brussel, Brussels.

 
2022 
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer

Alian, A, Rodriguez, R, Yadav, S, Peralagu, U, Sibaja-Hernandez, A, Putcha, V, Zhao, M, ElKashlan, R, Vermeersch, B, Yu, H, Bury, E, Khaled, A, Collaert, N & Parvais, B 2022, Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer . in ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC). European Solid-State Device Research Conference, vol. 2022-September, Institute of Electrical and Electronics Engineers Inc., pp. 384-387, IEEE 52nd European Solid-State Device Research Conference (ESSDERC), Milan, Italy, 19/09/22 .

Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier

ElKashlan, R, Khaled, A, Rodriguez, R, Yadav, S, Peralagu, U, Alian, A, Collaert, N , Wambacq, P & Parvais, B 2022, Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier . in 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022. Institute of Electrical and Electronics Engineers Inc., Denver, CO, USA, pp. 910-913, Microwave, MTT-S International Symposium, Denver, Colorado, United States, 19/06/22 .

Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation

ElKashlan, R, Khaled, A, Rodriguez, R, Putcha, V, Peralagu, U, Alian, A, Collaert, N , Wambacq, P & Parvais, B 2022, Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation . in 2021 16th European Microwave Integrated Circuits Conference (EuMIC). EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference, IEEE, pp. 30-33, European Microwave Week, London, United Kingdom, 2/04/22 .

III-V/III-N technologies for next generation high-capacity wireless communication

Collaert, N, Alian, A, Banerjee, A, Boccardi, G, Cardinael, P, Chauhan, V, Desset, C, Elkashlan, R, Khaled, A, Ingels, M, Kunert, B, Mols, Y, O'Sullivan, B, Peralagu, U, Pinho, N, Rodriguez, R, Sibaja-Hernandez, A, Sinha, S, Sun, X, Vais, A, Vermeersch, B, Yadav, S , Yan, D , Yu, H, Zhang, Y, Zhao, M, Van Driessche, J, Gramegna, G , Wambacq, P , Parvais, B & Peeters, M 2022, III-V/III-N technologies for next generation high-capacity wireless communication . in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 1151-1154, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 3/12/22 .

Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions

Yu, H , Parvais, B , Peralagu, U, Elkashlan, RY, Rodriguez, R, Khaled, A, Yadav, S, Alian, A, Zhao, M, De Almeida Braga, N, Cobb, J, Fang, J, Cardinael, P, Sibaja-Hernandez, A & Collaert, N 2022, Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions . in 2022 International Electron Devices Meeting, IEDM 2022. 2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 3061-3064, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 3/12/22 .

 
2021 
Transistor modelling for mm-Wave technology pathfinding

Parvais, B , Elkashlan, R, Yu, H, Sibaja-Hernandez, A, Vermeersch, B, Putcha, V, Cardinael, P, Rodriguez, R, Khaled, A, Alian, A, Peralagu, U, Zhao, M, Yadav, S, Gramegna, G, Driessche, JV & Collaert, N 2021, Transistor modelling for mm-Wave technology pathfinding . in SISPAD 2021 - 2021 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2021-September, Institute of Electrical and Electronics Engineers Inc., pp. 247-250, 26th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2021, Dallas, United States, 27/09/21 .

DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates

Yadav, S, Vais, A, Elkashlan, RY, Witters, L, Vondkar, K, Mols, Y, Walke, A, Yu, H, Alcotte, R, Ingels, M , Wambacq, P , Langer, R, Kunert, B, Waldron, N , Parvais, B & Collaert, N 2021, DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates . in EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference. , 9337489, EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 89-92, 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, Netherlands, 11/01/21 .

 
2020 
GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL

Parvais, B , Alian, A, Peralagu, U, Rodriguez, R, Yadav, S, Khaled, A, Elkashlan, RY, Putcha, V, Sibaja-Hernandez, A, Zhao, M , Wambacq, P , Collaert, N & Waldron, N 2020, GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL . in 2020 IEEE International Electron Devices Meeting, IEDM 2020. , 9372056, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 8.1.1-8.1.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 12/12/20 .

From 5G to 6G: Will compound semiconductors make the difference?

Collaert, N, Alian, A, Banerjee, A, Chauhan, V, Elkashlan, RY, Hsu, B, Ingels, M, Khaled, A, Vondkar Kodandarama, K, Kunert, B, Mols, Y, Peralagu, U, Putcha, V, Rodriguez, R, Sibaja-Hernandez, A, Simoen, E, Vais, A, Walke, A, Witters, L, Yadav, S, Yu, H, Zhao, M , Wambacq, P , Parvais, B & Waldron, N 2020, From 5G to 6G: Will compound semiconductors make the difference? in S Yu, X Zhu & T-A Tang (eds), 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings. , 9278253, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020, Virtual, Kunming, China, 3/11/20 .

Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs

Elkashlan, RY, Rodriguez, R, Yadav, S, Khaled, A, Peralagu, U, Alian, A, Waldron, N, Zhao, M , Wambacq, P , Parvais, B & Collaert, N 2020, ' Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs ', IEEE Transactions on Electron Devices , vol. 67, no. 11, 9186848, pp. 4592-4596.

(Invited) Advanced Transistors for High Frequency Applications

Parvais, B , Peralagu, U, Vais, A, Alian, A, Witters, L, Mols, Y, Walke, A, Ingels, M, Yu, H, Putcha, V, Khaled, A, Rodriguez, R, Sibaja-Hernandez, A, Yadav, S, Elkashlan, R, Baryshnikova, M, Mannaert, G, Alcotte, R, Kunert, B, Simoen, E, Zhao, E, De Jaeger, B, Fleetwood, D, Langer, R, Zhao, M , Wambacq, P , Waldron, N & Collaert, N 2020, ' (Invited) Advanced Transistors for High Frequency Applications ', ECS Transactions , vol. 97, no. 27, pp. 27-38.