Design of a 10.56-Gb/s 64-QAM Polar Transmitter at 60 GHz in 28-nm CMOS
Nguyen, J , Khalaf, K , Tang, X , Brebels, S, Vaesen, K, Shrivas, M & Wambacq, P 2023, ' Design of a 10.56-Gb/s 64-QAM Polar Transmitter at 60 GHz in 28-nm CMOS ', IEEE Journal of Solid-State Circuits , pp. 1-13.
Design and Analysis of a 140-GHz T/R Front-End Module in 22-nm FD-SOI CMOS
Tang, X , Nguyen, J , Mangraviti, G, Zong, Z & Wambacq, P 2022, ' Design and Analysis of a 140-GHz T/R Front-End Module in 22-nm FD-SOI CMOS ', IEEE Journal of Solid-State Circuits , vol. 57, no. 5, pp. 1300-1313.
Integrated radio front-end Circuits for 5G and 6G wireless application
Tang, X 2022, ' Integrated radio front-end Circuits for 5G and 6G wireless application ', Vrije Universiteit Brussel.
A 39GHz T/R front-end module achieving 25.6% PAEmax, 20dBm Psat, 5.7dB NF, and -13dBm IIP3 in 22nm FD-SOI for 5G communications
Zong, Z , Nguyen, J , Liu, Y, Zhang, Y , Tang, X , Mangraviti, G & Wambacq, P 2021, A 39GHz T/R front-end module achieving 25.6% PAEmax, 20dBm Psat, 5.7dB NF, and -13dBm IIP3 in 22nm FD-SOI for 5G communications . in 2021 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2021. , 9490466, 2021 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), IEEE, pp. 23-26, 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Atlanta, United States, 7/06/21 .
A 140 GHz T/R Front-End Module in 22 nm FD-SOI CMOS
Tang, X , Nguyen, J , Mangraviti, G, Zong, Z & Wambacq, P 2021, A 140 GHz T/R Front-End Module in 22 nm FD-SOI CMOS . in 2021 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2021. , 9490470, 2021 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), IEEE, pp. 35-38, 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Atlanta, United States, 7/06/21 .
Design and Analysis of a 28 GHz T/R Front-End Module in 22-nm FD-SOI CMOS Technology
Tang, X , Liu, Y, Mangraviti, G, Zong, Z, Khalaf, K, Zhang, Y, Wu, W-M, Chen, S-H, Debaillie, B & Wambacq, P 2021, ' Design and Analysis of a 28 GHz T/R Front-End Module in 22-nm FD-SOI CMOS Technology ', IEEE Transactions on Microwave Theory and Techniques , vol. 69, no. 6, 9366313, pp. 2841-2853.
A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner
Zong, Z , Tang, X , Khalaf, K , Yan, D , Mangraviti, G , Nguyen, J , Liu, Y & Wambacq, P 2021, ' A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner ', IEEE Transactions on Microwave Theory and Techniques , vol. 69, no. 6, 9380573, pp. 2795-2808.
A 28 GHz front-end module with T/R switch achieving 17.2 dBm P-sat, 21.5% PAE(max) and 3.2 dB NF in 22 nm FD-SOI for 5G communication
Liu, Y , Tang, X , Mangraviti, G, Khalaf, K, zhang, Y, Wu, W-M, Chen, S-H, Debaillie, B & Wambacq, P 2020, A 28 GHz front-end module with T/R switch achieving 17.2 dBm P-sat, 21.5% PAE(max) and 3.2 dB NF in 22 nm FD-SOI for 5G communication . in 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, pp. 1-4, 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 4/08/20 .
A 28GHz Voltage-Combined Doherty Power Amplifier with a Compact Transformer-based Output Combiner in 22nm FD-SOI
Zong, Z , Tang, X , Khalaf, K , Yan, D , Mangraviti, G , Nguyen, JH-D , Liu, Y & Wambacq, P 2020, A 28GHz Voltage-Combined Doherty Power Amplifier with a Compact Transformer-based Output Combiner in 22nm FD-SOI . in 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, pp. 1-4, 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 4/08/20 .
A 28 GHz front-end module with T/R switch achieving 17.2 dBm Psat, 21.5% PAEmax and 3.2 dB NF in 22 nm FD-SOI for 5G communication
Liu, Y , Tang, X , Mangraviti, G, Khalaf, K, zhang, Y, Wu, W-M, Chen, S-H, Debaillie, B & Wambacq, P 2020, A 28 GHz front-end module with T/R switch achieving 17.2 dBm P-sat, 21.5% PAE(max) and 3.2 dB NF in 22 nm FD-SOI for 5G communication . in 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, pp. 1-4, 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 4/08/20 .
Design of D-Band Transformer-Based Gain-Boosting Class-AB Power Amplifiers in Silicon Technologies
Tang, X , Nguyen, J , Medra, A, Khalaf, K, Visweswaran, A, Debaillie, B & Wambacq, P 2020, ' Design of D-Band Transformer-Based Gain-Boosting Class-AB Power Amplifiers in Silicon Technologies ', IEEE Transactions on Circuits and Systems I: Regular Papers , vol. 67, no. 5, 9004504, pp. 1447-1458.
A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI
Zong, Z , Tang, X , Nguyen, JH-D , Khalaf, K, Mangraviti, G, Liu, Y & Wambacq, P 2020, A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI . in 2020 IEEE Custom Integrated Circuits Conference (CICC). pp. 1-4, 2020 IEEE Custom Integrated Circuits Conference (CICC), United States, 22/03/19 .
A 112-142GHz Power Amplifier with Regenerative Reactive Feedback achieving 17dBm peak Psat at 13% PAE
Visweswaran, A, Vignon, B , Tang, X , Brebels, S, Debaillie, B & Wambacq, P 2019, A 112-142GHz Power Amplifier with Regenerative Reactive Feedback achieving 17dBm peak Psat at 13% PAE . in ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference. ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 337-340.
Systematic Design of On-Chip Matching Networks for D-band Circuits
Nguyen, JH-D , Tang, X , Khalaf, K, Debaillie, B & Wambacq, P 2019, Systematic Design of On-Chip Matching Networks for D-band Circuits . in 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS). , 8961221, IEEE, pp. 1-4, 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), Munich, Germany, 23/06/19 .
Design of A D-band Transformer-Based Neutralized Class-AB Power Ampli?er in Silicon Technologies
Tang, X , Medra, A , Nguyen, JH-D , Khalaf, K, Debaillie, B & Wambacq, P 2019, Design of A D-band Transformer-Based Neutralized Class-AB Power Ampli?er in Silicon Technologies . in 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS). IEEE, pp. 1-4, 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), Munich, Germany, 23/06/19 .