The use of nanometer technology allows integrated circuits to contain devices and interconnections with dimensions below 0.1 micrometers. People believe power dissipation in devices and interconnect lines will prevent a further down scaling of IC technology below this 0.1 micrometer linewidth. In nthis project we want to investigate whether, by using nanometer technology, transistor structuresand opto-electronic devices can be realized that can bring IC technology beyond this limit. By studying III-V transistors with a genuine gate dielectric in the area of 100 to 250 nm gate lengths, we hope to get a certain insight in the possibilities of sub 0.1 micrometer technology. Transistors will be realized both horizontally and vertically integrated. Alternative light sources for optical interchip connections will be studied as well. Here we think of non resonant cavity LEDs and Field Emission Devices for short wavelenght communication (blue light).

Runtime: 1998 - 2002