We investigate AlN/GaN MISHEMTs fabricated on a 200 mm Si substrate with an in-situ SiN as the gate insulator and access region passivation layer. The impact of SiN thickness scaling on the large-signal performance is analysed using pulsed IV characterisation combined with first-order load-line-based formulae to quantify the degradation in Pout and PAE stemming from increased trapping-induced current collapse associated with thinned-down SiN thicknesses. At 28 GHz, large-signal characterisation, including tuning up to the third harmonic, reveals a competitive linear gain of 15 dB and PAE of 62.5% at 6 V, making these devices suitable for user equipment intended for FR2/FR3 operation.
Elkashlan, R, Yadav, S, Khaled, A, Xiao, D, Kazemi, B, Yu, H, Alian, AR, Peralagu, U, Collaert, N & Parvais, B 2024, Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz. in 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024. IEEE MTT-S International Microwave Symposium Digest, Institute of Electrical and Electronics Engineers Inc., pp. 948-951, 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024, Washington, United States, 16/06/24. https://doi.org/10.1109/IMS40175.2024.10600314, https://doi.org/10.1109/IMS40175.2024.10600314
Elkashlan, R., Yadav, S., Khaled, A., Xiao, D., Kazemi, B., Yu, H., Alian, A. R., Peralagu, U., Collaert, N., & Parvais, B. (2024). Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz. In 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024 (pp. 948-951). (IEEE MTT-S International Microwave Symposium Digest). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMS40175.2024.10600314, https://doi.org/10.1109/IMS40175.2024.10600314
@inproceedings{fff7511e6af54394a7a4ba3a00a2e851,
title = "Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz",
abstract = "We investigate AlN/GaN MISHEMTs fabricated on a 200 mm Si substrate with an in-situ SiN as the gate insulator and access region passivation layer. The impact of SiN thickness scaling on the large-signal performance is analysed using pulsed IV characterisation combined with first-order load-line-based formulae to quantify the degradation in Pout and PAE stemming from increased trapping-induced current collapse associated with thinned-down SiN thicknesses. At 28 GHz, large-signal characterisation, including tuning up to the third harmonic, reveals a competitive linear gain of 15 dB and PAE of 62.5% at 6 V, making these devices suitable for user equipment intended for FR2/FR3 operation.",
keywords = "Gallium nitride, HEMTs, power amplifiers",
author = "Rana Elkashlan and Sachin Yadav and Ahmad Khaled and Dongping Xiao and Babak Kazemi and Hao Yu and Alian, {Ali Reza} and Uthayasankaran Peralagu and Nadine Collaert and Bertrand Parvais",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024 ; Conference date: 16-06-2024 Through 21-06-2024",
year = "2024",
doi = "10.1109/IMS40175.2024.10600314",
language = "English",
isbn = "9798350375046",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "948--951",
booktitle = "2024 IEEE/MTT-S International Microwave Symposium, IMS 2024",
address = "United States",
}