J. Van Olmen, A. Mercha, G. Katti, C. Huyghebaert, J. Van Aelst, E. Seppala, Zhao Chao, S. Armini, J. Vaes, R. Teixeira Cotrin, M. Van Cauwenberghe, P. Verdonck, K. Verhemeldonck, A. Jourdain, W. Ruythooren, M. De Potter De Ten Broeck, A. Opdebeeck, T. Chiarella,
Bertrand Parvais, I. Debusschere, T. Y. Hoffmann, M. Stucchi, M. Rakowski, Ph Soussan, R. Cartuyvels, E. Beyne, S. Biesemans, B. Swinnen, W. Dehaene
We report for the first time the demonstration of 3D integrated circuits obtained by die-to-die stacking using Cu Through Silicon Vias (TSV). The Cu TSV process is inserted between contact and M1 of our reference 0.13μm CMOS process on 200mm wafers. The top die is thinned down to 25μm and bonded to the landing wafer by Cu-Cu thermo-compression. Both top and landing wafers contain CMOS finished at M2 to evaluate the process impact both FEOL and BEOL. The results confirm no degradation of the FEOL performance. The functionality of various ring oscillator topologies that include inverters distributed over both top and bottom dies connected through TSVs demonstrates excellent chip integrity after the TSV and 3D stacking process.
Van Olmen, J, Mercha, A, Katti, G, Huyghebaert, C, Van Aelst, J, Seppala, E, Chao, Z, Armini, S, Vaes, J, Teixeira Cotrin, R, Van Cauwenberghe, M, Verdonck, P, Verhemeldonck, K, Jourdain, A, Ruythooren, W, De Potter De Ten Broeck, M, Opdebeeck, A, Chiarella, T, Parvais, B, Debusschere, I, Hoffmann, TY, Stucchi, M, Rakowski, M, Soussan, P, Cartuyvels, R, Beyne, E, Biesemans, S, Swinnen, B & Dehaene, W 2011, '3D stacked IC demonstration using a through silicon via first approach', Paper presented at IMAPS International Conference and Exhibition on Device Packaging - In Conjunction with the Global Business Council, GBC 2011 Spring Conference, Scottsdale/Fountain Hills, AZ, United States, 7/03/11 - 10/03/11 pp. 76-79.
Van Olmen, J., Mercha, A., Katti, G., Huyghebaert, C., Van Aelst, J., Seppala, E., Chao, Z., Armini, S., Vaes, J., Teixeira Cotrin, R., Van Cauwenberghe, M., Verdonck, P., Verhemeldonck, K., Jourdain, A., Ruythooren, W., De Potter De Ten Broeck, M., Opdebeeck, A., Chiarella, T., Parvais, B., ... Dehaene, W. (2011). 3D stacked IC demonstration using a through silicon via first approach. 76-79. Paper presented at IMAPS International Conference and Exhibition on Device Packaging - In Conjunction with the Global Business Council, GBC 2011 Spring Conference, Scottsdale/Fountain Hills, AZ, United States.
@conference{31692f58e3c947ac9b44b5c09e3f90ad,
title = "3D stacked IC demonstration using a through silicon via first approach",
abstract = "We report for the first time the demonstration of 3D integrated circuits obtained by die-to-die stacking using Cu Through Silicon Vias (TSV). The Cu TSV process is inserted between contact and M1 of our reference 0.13μm CMOS process on 200mm wafers. The top die is thinned down to 25μm and bonded to the landing wafer by Cu-Cu thermo-compression. Both top and landing wafers contain CMOS finished at M2 to evaluate the process impact both FEOL and BEOL. The results confirm no degradation of the FEOL performance. The functionality of various ring oscillator topologies that include inverters distributed over both top and bottom dies connected through TSVs demonstrates excellent chip integrity after the TSV and 3D stacking process.",
author = "{Van Olmen}, J. and A. Mercha and G. Katti and C. Huyghebaert and {Van Aelst}, J. and E. Seppala and Zhao Chao and S. Armini and J. Vaes and {Teixeira Cotrin}, R. and {Van Cauwenberghe}, M. and P. Verdonck and K. Verhemeldonck and A. Jourdain and W. Ruythooren and {De Potter De Ten Broeck}, M. and A. Opdebeeck and T. Chiarella and B. Parvais and I. Debusschere and Hoffmann, {T. Y.} and M. Stucchi and M. Rakowski and Ph Soussan and R. Cartuyvels and E. Beyne and S. Biesemans and B. Swinnen and W. Dehaene",
year = "2011",
month = dec,
day = "1",
language = "English",
pages = "76--79",
note = "IMAPS International Conference and Exhibition on Device Packaging - In Conjunction with the Global Business Council, GBC 2011 Spring Conference ; Conference date: 07-03-2011 Through 10-03-2011",
}