Publication Details
S. Yadav, A. Vais, Rana Yasser ElKashlan, R. Y. Elkashlan, L. Witters, K. Vondkar, Y. Mols, A. Walke, H. Yu, R. Alcotte, M. Ingels, Piet Wambacq, R. Langer, B. Kunert, N. Waldron, Bertrand Parvais, N. Collaert

EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

Contribution To Book Anthology


Performance and complexity of next-generation communication systems can be enhanced by the realization of III-V materials on large-area Si substrates and their heterogenous integration with Si-CMOS. In this paper, a GaAs/InGaP HBT technology which is integrated on 300 mm Si substrates using nano-ridge engineering is described. DC and RF characterization of the devices is presented, and device characteristics are explained using physical modeling. The impact of nano-ridge sidewall on device DC performance is studied in detail. Further, a RF small-signal model applicable to these devices is proposed and guidelines for further improvements in RF performance are discussed.