Crupi, G., Schreurs, D. M. M. P., Caddemi, A., Angelov, I., Homayouni, M., Raffo, A., Vannini, G., & Parvais, B. (2009). Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects. Microelectronic Engineering, 86(11), 2283-2289. https://doi.org/10.1016/j.mee.2009.04.006

@article{ddf1dec7926041ceaa2e1f62cbcbd1c3,
title = "Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects",
abstract = "An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency.",
keywords = "FinFET, Large signal network analyzer, Non-quasi-static effects, Nonlinear model, Semiconductor device modeling",
author = "Giovanni Crupi and Schreurs, {Dominique M.M.P.} and Alina Caddemi and Iltcho Angelov and Majid Homayouni and Antonio Raffo and Giorgio Vannini and Bertrand Parvais",
year = "2009",
month = nov,
day = "1",
doi = "10.1016/j.mee.2009.04.006",
language = "English",
volume = "86",
pages = "2283--2289",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "11",
}