Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or Multiple-Gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and VT stability. Measured device performance is used to simulate the impact of these trends on circuit design trade-offs. Migrating from SiON to HfO2 dielectric approximately doubles area and power consumption to keep matching and noise performance constant. Transient VT instabilities in the range of 10mV can degrade the resolution of analog-to-digital converters by more than one bit. The use of non-binary ADCs is proposed to overcome these issues.
Fulde, M, Mercha, A, Gustin, C, Parvais, B, Subramanian, V, Arnim, KV, Bauer, F, Schruefer, K, Schmitt-Landsiedel, D & Knoblingert, G 2007, Analog design challenges and trade-offs using emerging materials and devices. in ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference., 4430261, ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference, pp. 123-126, ESSCIRC 2007 - 33rd European Solid-State Circuits Conference, Munich, Germany, 11/09/07. https://doi.org/10.1109/ESSCIRC.2007.4430261
Fulde, M., Mercha, A., Gustin, C., Parvais, B., Subramanian, V., Arnim, K. V., Bauer, F., Schruefer, K., Schmitt-Landsiedel, D., & Knoblingert, G. (2007). Analog design challenges and trade-offs using emerging materials and devices. In ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference (pp. 123-126). Article 4430261 (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2007.4430261
@inproceedings{b84c3da5356344d1862ea242b81f914b,
title = "Analog design challenges and trade-offs using emerging materials and devices",
abstract = "Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or Multiple-Gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and VT stability. Measured device performance is used to simulate the impact of these trends on circuit design trade-offs. Migrating from SiON to HfO2 dielectric approximately doubles area and power consumption to keep matching and noise performance constant. Transient VT instabilities in the range of 10mV can degrade the resolution of analog-to-digital converters by more than one bit. The use of non-binary ADCs is proposed to overcome these issues.",
author = "M. Fulde and A. Mercha and C. Gustin and B. Parvais and V. Subramanian and Arnim, {K. V.} and F. Bauer and K. Schruefer and D. Schmitt-Landsiedel and G. Knoblingert",
year = "2007",
month = dec,
day = "1",
doi = "10.1109/ESSCIRC.2007.4430261",
language = "English",
isbn = "1424411254",
series = "ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference",
pages = "123--126",
booktitle = "ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference",
note = "ESSCIRC 2007 - 33rd European Solid-State Circuits Conference ; Conference date: 11-09-2007 Through 13-09-2007",
}