Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or Multiple-Gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and VT stability. Measured device performance is used to simulate the impact of these trends on circuit design trade-offs. Migrating from SiON to HfO2 dielectric approximately doubles area and power consumption to keep matching and noise performance constant. Transient VT instabilities in the range of 10mV can degrade the resolution of analog-to-digital converters by more than one bit. The use of non-binary ADCs is proposed to overcome these issues.
Fulde, M, Mercha, A, Gustin, C, Parvais, B, Subramanian, V, Arnim, KV, Bauer, F, Schruefer, K, Schmitt-Landsiedel, D & Knoblingert, G 2007, Analog design challenges and trade-offs using emerging materials and devices. in ESSDERC07 - 2007 37th European Solid State Device Research Conference., 4430894, ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference, vol. 2007, IEEE Computer Society, pp. 123-126, ESSDERC 2007 - 37th European Solid-State Device Research Conference, Munich, Germany, 11/09/07. https://doi.org/10.1109/ESSDERC.2007.4430894
Fulde, M., Mercha, A., Gustin, C., Parvais, B., Subramanian, V., Arnim, K. V., Bauer, F., Schruefer, K., Schmitt-Landsiedel, D., & Knoblingert, G. (2007). Analog design challenges and trade-offs using emerging materials and devices. In ESSDERC07 - 2007 37th European Solid State Device Research Conference (pp. 123-126). Article 4430894 (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference; Vol. 2007). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2007.4430894
@inproceedings{1d4d27b27cdb4edb900127acc1b74928,
title = "Analog design challenges and trade-offs using emerging materials and devices",
abstract = "Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or Multiple-Gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and VT stability. Measured device performance is used to simulate the impact of these trends on circuit design trade-offs. Migrating from SiON to HfO2 dielectric approximately doubles area and power consumption to keep matching and noise performance constant. Transient VT instabilities in the range of 10mV can degrade the resolution of analog-to-digital converters by more than one bit. The use of non-binary ADCs is proposed to overcome these issues.",
author = "M. Fulde and A. Mercha and C. Gustin and B. Parvais and V. Subramanian and Arnim, {K. V.} and F. Bauer and K. Schruefer and D. Schmitt-Landsiedel and G. Knoblingert",
year = "2007",
month = jan,
day = "1",
doi = "10.1109/ESSDERC.2007.4430894",
language = "English",
isbn = "1424411238",
series = "ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "123--126",
booktitle = "ESSDERC07 - 2007 37th European Solid State Device Research Conference",
address = "United States",
note = "ESSDERC 2007 - 37th European Solid-State Device Research Conference ; Conference date: 11-09-2007 Through 13-09-2007",
}