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Giovanni Crupi, Dominique M.M.P. Schreurs, Dongping Xiao, Alina Caddemi, Bertrand Parvais, Abdelkarim Mercha, Stefaan Decoutere
 

Contribution to journal

Abstract 

The Fin field effect transistor (FinFET) is a multiple gate structure, which is recently emerging as a leading structure to continue the scaling of CMOS technology into the nanometer regime. This promising multiple gate structure has not only the advantage of reducing short channel effects but also of being compatible with the conventional planar CMOS technology. To our knowledge, this is the first letter addressing the nonlinear FinFET model validated by large signal network analyzer measurements. Here, we present a nonlinear FinFET model which is based on lookup tables. The accuracy of the developed model is completely and successfully verified through the comparison with nonlinear FinFET measurements.

Reference 
 
 
DOI  scopus