The Fin field effect transistor (FinFET) is a multiple gate structure, which is recently emerging as a leading structure to continue the scaling of CMOS technology into the nanometer regime. This promising multiple gate structure has not only the advantage of reducing short channel effects but also of being compatible with the conventional planar CMOS technology. To our knowledge, this is the first letter addressing the nonlinear FinFET model validated by large signal network analyzer measurements. Here, we present a nonlinear FinFET model which is based on lookup tables. The accuracy of the developed model is completely and successfully verified through the comparison with nonlinear FinFET measurements.
Crupi, G, Schreurs, DMMP, Xiao, D, Caddemi, A, Parvais, B, Mercha, A & Decoutere, S 2007, 'Determination and validation of new nonlinear FinFET model based on lookup tables', IEEE Microwave and Wireless Components Letters, vol. 17, no. 5, pp. 361-363. https://doi.org/10.1109/LMWC.2007.895711
Crupi, G., Schreurs, D. M. M. P., Xiao, D., Caddemi, A., Parvais, B., Mercha, A., & Decoutere, S. (2007). Determination and validation of new nonlinear FinFET model based on lookup tables. IEEE Microwave and Wireless Components Letters, 17(5), 361-363. https://doi.org/10.1109/LMWC.2007.895711
@article{500dfaec25e644ab96bfbdf5daed7dfc,
title = "Determination and validation of new nonlinear FinFET model based on lookup tables",
abstract = "The Fin field effect transistor (FinFET) is a multiple gate structure, which is recently emerging as a leading structure to continue the scaling of CMOS technology into the nanometer regime. This promising multiple gate structure has not only the advantage of reducing short channel effects but also of being compatible with the conventional planar CMOS technology. To our knowledge, this is the first letter addressing the nonlinear FinFET model validated by large signal network analyzer measurements. Here, we present a nonlinear FinFET model which is based on lookup tables. The accuracy of the developed model is completely and successfully verified through the comparison with nonlinear FinFET measurements.",
keywords = "Fin field effect transistor (FinFET), Large signal measurements, Lookup table, Multiple gate structure, Nonlinear model",
author = "Giovanni Crupi and Schreurs, {Dominique M.M.P.} and Dongping Xiao and Alina Caddemi and Bertrand Parvais and Abdelkarim Mercha and Stefaan Decoutere",
year = "2007",
month = may,
day = "1",
doi = "10.1109/LMWC.2007.895711",
language = "English",
volume = "17",
pages = "361--363",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}