Design and validation of an electrostatic discharge (ESD)-protected ultra-wideband low-noise amplifier (LNA) is presented in this paper. It features an interstage matching network for gain roll-off compensation to achieve a flat gain over its passband. Evaluated with a chip-on-board approach, the amplifier demonstrates a gain of 11.8 ± 0.3 dB, minimum noise figure of 2.1 dB, and a group delay variation of ±30 ps from 3 to 5 GHz, even though it uses a less advanced 0.35- micron BiCMOS technology. The LNA is protected against human body model ESD stress up to 6.5 kV. The measured input third-order intercept point at 4.5 GHz is -5.5 dBm. The core LNA draws 3 mA from a 3-V supply
Liu, M, Craninckx, J, Natarajan, MI, Kuijk, M & Barel, A 2006, 'A 6.5-kV ESD-Protected 3-5-GHz Ultra-Wideband BiCMOS Low-Noise Amplifier Using Interstage Gain Roll-Off Compensation', IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 4, pp. 1698-1706.
Liu, M., Craninckx, J., Natarajan, M. I., Kuijk, M., & Barel, A. (2006). A 6.5-kV ESD-Protected 3-5-GHz Ultra-Wideband BiCMOS Low-Noise Amplifier Using Interstage Gain Roll-Off Compensation. IEEE Transactions on Microwave Theory and Techniques, 54(4), 1698-1706.
@article{7f9bf2b7b049450b9da68b231989f03a,
title = "A 6.5-kV ESD-Protected 3-5-GHz Ultra-Wideband BiCMOS Low-Noise Amplifier Using Interstage Gain Roll-Off Compensation",
abstract = "Design and validation of an electrostatic discharge (ESD)-protected ultra-wideband low-noise amplifier (LNA) is presented in this paper. It features an interstage matching network for gain roll-off compensation to achieve a flat gain over its passband. Evaluated with a chip-on-board approach, the amplifier demonstrates a gain of 11.8 ± 0.3 dB, minimum noise figure of 2.1 dB, and a group delay variation of ±30 ps from 3 to 5 GHz, even though it uses a less advanced 0.35- micron BiCMOS technology. The LNA is protected against human body model ESD stress up to 6.5 kV. The measured input third-order intercept point at 4.5 GHz is -5.5 dBm. The core LNA draws 3 mA from a 3-V supply",
keywords = "ultra wideband amplifier, electrostatic discharge, integrated circuit design, low noise amplifiers, MMIC amplifiers",
author = "Mingxu Liu and Jan Craninckx and Natarajan, {Mahadeva Iyer} and Maarten Kuijk and Alain Barel",
note = "IEEE Transactions on Microwave Theory and Techniques, Vol. 54, No. 4, April 2006, pp. 1698-1706",
year = "2006",
month = apr,
day = "1",
language = "English",
volume = "54",
pages = "1698--1706",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}