The epitaxial growth of GaN on Ge is reported. The authors found that direct growth of GaN performs exceptionally well on Ge(111) with plasma assisted molecular beam epitaxy. A streaky reflection high energy electron diffraction pattern is observed during growth. X-ray diffraction showed a rocking curve full width at half maximum of only 371 arc sec for a 38 nm GaN layer and indicates an abrupt interface between the GaN and Ge. Secondary ion mass spectrometry shows limited diffusion of Ga atoms into the Ge substrate and Ge atoms into the GaN layers. Current-voltage measurements show rectifying behavior for n-GaN on p-Ge. Their results indicate that GaN growth on Ge does not require intermediate layers, allowing the Ge substrate to be used as back contact in vertical devices. A p-n junction formed between GaN and Ge can be used in heterojunction devices.
Lieten, R, Stefan, D, Cheng, K, Leys, M, Kuijk, M & Borghs, G 2006, 'Growth of GaN on Ge(111) by molecular beam Epitaxy', Applied Physics Letters, vol. 89, pp. 1-3.
Lieten, R., Stefan, D., Cheng, K., Leys, M., Kuijk, M., & Borghs, G. (2006). Growth of GaN on Ge(111) by molecular beam Epitaxy. Applied Physics Letters, 89, 1-3.
@article{42a2d765f32245a4aa4335b07ca58f96,
title = "Growth of GaN on Ge(111) by molecular beam Epitaxy",
abstract = "The epitaxial growth of GaN on Ge is reported. The authors found that direct growth of GaN performs exceptionally well on Ge(111) with plasma assisted molecular beam epitaxy. A streaky reflection high energy electron diffraction pattern is observed during growth. X-ray diffraction showed a rocking curve full width at half maximum of only 371 arc sec for a 38 nm GaN layer and indicates an abrupt interface between the GaN and Ge. Secondary ion mass spectrometry shows limited diffusion of Ga atoms into the Ge substrate and Ge atoms into the GaN layers. Current-voltage measurements show rectifying behavior for n-GaN on p-Ge. Their results indicate that GaN growth on Ge does not require intermediate layers, allowing the Ge substrate to be used as back contact in vertical devices. A p-n junction formed between GaN and Ge can be used in heterojunction devices.",
keywords = "growth, MBE, GaN, Ge, heterojunction",
author = "Ruben Lieten and Degroote Stefan and Kai Cheng and Maarten Leys and Maarten Kuijk and Gustaaf Borghs",
year = "2006",
month = dec,
day = "22",
language = "English",
volume = "89",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
}