Flandre, D., Adriaensen, S., Akheyar, A., Crahay, A., Demeûs, L., Delatte, P., Dessard, V., Iniguez, B., Nève, A., Katschmarskyj, B., Loumaye, P., Laconte, J., Martinez, I., Picun, G., Rauly, E., Renaux, C., Spôte, D., Zitout, M., Dehan, M., ... Raskin, J. P. (2001). Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems. Solid-State Electronics, 45(4), 541-549. https://doi.org/10.1016/S0038-1101(01)00084-3

@article{49e355e2bdb643cb844d80b0298470d9,
title = "Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems",
abstract = "Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 μm may emerge as a most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350°C.",
keywords = "Double-gate, High-temperature, Micropower, Microsystems, RF, Silicon-on-insulator",
author = "D. Flandre and S. Adriaensen and A. Akheyar and A. Crahay and L. Deme{\^u}s and P. Delatte and V. Dessard and B. Iniguez and A. N{\`e}ve and B. Katschmarskyj and P. Loumaye and J. Laconte and I. Martinez and G. Picun and E. Rauly and C. Renaux and D. Sp{\^o}te and M. Zitout and M. Dehan and B. Parvais and P. Simon and D. Vanhoenacker and Raskin, {J. P.}",
year = "2001",
month = may,
day = "1",
doi = "10.1016/S0038-1101(01)00084-3",
language = "English",
volume = "45",
pages = "541--549",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier",
number = "4",
}