D. Flandre, D. Flandre, S. Adriaensen, S. Adriaensen, A. Akheyar, A. Akheyar, A. Crahay, A. Crahay, L. Deme没s, L. Deme没s, P. Delatte, P. Delatte, V. Dessard, V. Dessard, B. Iniguez, B. Iniguez, A. N猫ve, A. N猫ve, B. Katschmarskyj, B. Katschmarskyj, P. Loumaye, P. Loumaye, J. Laconte, J. Laconte, I. Martinez, I. Martinez, G. Picun, G. Picun, E. Rauly, E. Rauly, C. Renaux, C. Renaux, D. Sp么te, D. Sp么te, M. Zitout, M. Zitout, M. Dehan, M. Dehan,
Bertrand Parvais,
Bertrand Parvais, P. Simon, P. Simon, D. Vanhoenacker, D. Vanhoenacker, J. P. Raskin, J. P. Raskin
Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 渭m may emerge as a most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350掳C.
Flandre, D, Adriaensen, S, Akheyar, A, Crahay, A, Deme没s, L, Delatte, P, Dessard, V, Iniguez, B, N猫ve, A, Katschmarskyj, B, Loumaye, P, Laconte, J, Martinez, I, Picun, G, Rauly, E, Renaux, C, Sp么te, D, Zitout, M, Dehan, M, Parvais, B, Simon, P, Vanhoenacker, D & Raskin, JP 2001, 'Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems', Solid-State Electronics, vol. 45, no. 4, pp. 541-549. https://doi.org/10.1016/S0038-1101(01)00084-3
Flandre, D., Adriaensen, S., Akheyar, A., Crahay, A., Deme没s, L., Delatte, P., Dessard, V., Iniguez, B., N猫ve, A., Katschmarskyj, B., Loumaye, P., Laconte, J., Martinez, I., Picun, G., Rauly, E., Renaux, C., Sp么te, D., Zitout, M., Dehan, M., ... Raskin, J. P. (2001). Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems. Solid-State Electronics, 45(4), 541-549. https://doi.org/10.1016/S0038-1101(01)00084-3
@article{49e355e2bdb643cb844d80b0298470d9,
title = "Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems",
abstract = "Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 渭m may emerge as a most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350掳C.",
keywords = "Double-gate, High-temperature, Micropower, Microsystems, RF, Silicon-on-insulator",
author = "D. Flandre and S. Adriaensen and A. Akheyar and A. Crahay and L. Deme{\^u}s and P. Delatte and V. Dessard and B. Iniguez and A. N{\`e}ve and B. Katschmarskyj and P. Loumaye and J. Laconte and I. Martinez and G. Picun and E. Rauly and C. Renaux and D. Sp{\^o}te and M. Zitout and M. Dehan and B. Parvais and P. Simon and D. Vanhoenacker and Raskin, \{J. P.\}",
year = "2001",
month = may,
day = "1",
doi = "10.1016/S0038-1101(01)00084-3",
language = "English",
volume = "45",
pages = "541--549",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier",
number = "4",
}