Rooman, C., Windisch, R., Dhondt, M., Moerman, I., Mijlemans, P., Dutta, B., Borghs, G., Vounckx, R., Kuijk, M., & Heremans, P. (2001). High-efficiency 650 nm thin-film light-emitting diodes. In LIGHT-EMITTING DIODES: RESEARCH MANUFACTURING, AND APPLICATIONS V (Vol. 4278, pp. 36-40). SPIE.

@inproceedings{b71c7964c07147a6a33f6f2bb235583a,
title = "High-efficiency 650 nm thin-film light-emitting diodes",
abstract = "The external quantum efficiency of planar light-emitting diodes (LED's) can be increased significantly by the approach of a non-resonant cavity (NRC) LED, which consists of texturing the top surface and applying a rear reflector. We demonstrate this approach for the first time on 650-nm InGaP/AlInGaP LED's. The LED's are fabricated using the processing techniques developed previously for 860-nm GaAs/AlGaAs NRC-LED's, which include wet thermal oxidation for the formation of a current aperture. With un-encapsulated NRC-LED's, we report an external quantum efficiency of 24% for an emission wavelength of 655 nm. This is an 11-fold increase of the external quantum efficiency, as compared to conventional devices. Furthermore,, the efficiency is demonstrated to increase to 31% by on-wafer encapsulation of the LED's. This results in an optical output power of 4 mW for a drive current of 7 mA",
keywords = "non-resonant cavity, light-emitting diode, oxidized aperture, surface texturing",
author = "Cathleen Rooman and Reiner Windisch and M. Dhondt and I. Moerman and P. Mijlemans and Barun Dutta and Gustaaf Borghs and Roger Vounckx and Maarten Kuijk and P. Heremans",
year = "2001",
month = jan,
day = "24",
language = "English",
isbn = "0-8194-3956-8",
volume = "4278",
pages = "36--40",
booktitle = "LIGHT-EMITTING DIODES: RESEARCH MANUFACTURING, AND APPLICATIONS V",
publisher = "SPIE",
address = "United States",
note = "Unknown ; Conference date: 24-01-2001",
}