Collaert, N. (2024). Heterojunction bipolar transistors for sub-THz applications. In New Materials and Devices Enabling 5G Applications and Beyond (pp. 139-178). Elsevier. https://doi.org/10.1016/B978-0-12-822823-4.00005-4

@inbook{6449fa985f7a47e99d7bf854109fc3ab,
title = "Heterojunction bipolar transistors for sub-THz applications",
abstract = "Sub-THz frequencies, with a frequency range of 0.1–1THz, have unique properties that make them useful for many applications, including imaging and sensing, as they can penetrate through many materials and are safe to use. These frequencies are located between the microwave and infrared regions of the electromagnetic spectrum. The D-band around 140GHz is the first band of interest for sub-THz wireless communication, especially in the context of 6G. However, widely used complementary metal-oxide-semiconductor technologies might not be the right choice for these circuits working at D-band, and bipolar transistors that have much higher breakdown and thus can deliver more power can be interesting device architectures for the power amplifiers working at frequencies above 100GHz. This chapter reviews the different types of bipolar transistors, their operating principle, typical optimization metrics, and trade-offs. It then delves into two particular implementations, InP and silicon-germanium heterojunction bipolar transistor (HBT), and several ways of upscaling InP HBTs before discussing device scaling and nonidealities. Finally, this chapter concludes with a short summary.",
keywords = "efficiency, Heterojunction bipolar transistor, InP, power, SiGe, sub-THz",
author = "Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 2024 Elsevier Inc. All rights reserved.",
year = "2024",
month = jan,
day = "1",
doi = "10.1016/B978-0-12-822823-4.00005-4",
language = "English",
isbn = "9780128234501",
pages = "139--178",
booktitle = "New Materials and Devices Enabling 5G Applications and Beyond",
publisher = "Elsevier",
address = "Netherlands",
}