Optimization of heterogeneous epitaxial techniques such as aspect ratio trapping and nano-ridge engineering strongly triggered the commercial breakthrough of III-V on Si devices for a variety of applications in fields like optoelectronics, lighting, telecommunication, power devices, RF circuitry etc. To achieve high device performance defect engineering is crucial to avoid increased leakage current, lifetime degradation and/or increased low frequency noise. The aim of this review is to discuss the present understanding of defects in III-V materials and devices and their impact on the device performance. This is illustrated by analyzing three important types of devices, including InxGa1-xAs p+n diodes, GaN/AlGaN/Si transistors (MOSFETs, HEMTs and MOSHEMTs) and GaAs/InGaP Heterojunction Bipolar Transistors (HBTs). It will be pointed out that by an appropriate defect control the further development of the monolithic III-V integration on Si will not be hampered and is facing a bright future.
Simoen, E, Hsu, PC, Takakura, K, Syshchyk, O, Vais, A, Yu, H, Parvais, B, Collaert, N & Claeys, C 2021, Defect engineering for monolithic integration of III-V semiconductors on silicon substrates. in E Simoen, O Kononchuk, O Nakatsuka & C Claeys (eds), 239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - High Purity and High Mobility Semiconductors 16. 4 edn, ECS Transactions, no. 4, vol. 102, IOP Publishing Ltd., pp. 53-62, 239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021, Chicago, United States, 30/05/21. https://doi.org/10.1149/10204.0053ecst
Simoen, E., Hsu, P. C., Takakura, K., Syshchyk, O., Vais, A., Yu, H., Parvais, B., Collaert, N., & Claeys, C. (2021). Defect engineering for monolithic integration of III-V semiconductors on silicon substrates. In E. Simoen, O. Kononchuk, O. Nakatsuka, & C. Claeys (Eds.), 239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - High Purity and High Mobility Semiconductors 16 (4 ed., pp. 53-62). (ECS Transactions; Vol. 102, No. 4). IOP Publishing Ltd.. https://doi.org/10.1149/10204.0053ecst
@inproceedings{f2c4bdf5c27148119b24d7af34c9b223,
title = "Defect engineering for monolithic integration of III-V semiconductors on silicon substrates",
abstract = "Optimization of heterogeneous epitaxial techniques such as aspect ratio trapping and nano-ridge engineering strongly triggered the commercial breakthrough of III-V on Si devices for a variety of applications in fields like optoelectronics, lighting, telecommunication, power devices, RF circuitry etc. To achieve high device performance defect engineering is crucial to avoid increased leakage current, lifetime degradation and/or increased low frequency noise. The aim of this review is to discuss the present understanding of defects in III-V materials and devices and their impact on the device performance. This is illustrated by analyzing three important types of devices, including InxGa1-xAs p+n diodes, GaN/AlGaN/Si transistors (MOSFETs, HEMTs and MOSHEMTs) and GaAs/InGaP Heterojunction Bipolar Transistors (HBTs). It will be pointed out that by an appropriate defect control the further development of the monolithic III-V integration on Si will not be hampered and is facing a bright future.",
author = "E. Simoen and Hsu, {P. C.} and K. Takakura and O. Syshchyk and A. Vais and H. Yu and B. Parvais and N. Collaert and C. Claeys",
year = "2021",
month = jan,
day = "1",
doi = "10.1149/10204.0053ecst",
language = "English",
series = "ECS Transactions",
publisher = "IOP Publishing Ltd.",
number = "4",
pages = "53--62",
editor = "E. Simoen and O. Kononchuk and O. Nakatsuka and C. Claeys",
booktitle = "239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - High Purity and High Mobility Semiconductors 16",
address = "United Kingdom",
edition = "4",
note = "239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 ; Conference date: 30-05-2021 Through 03-06-2021",
}