Reliability and variability-aware simulations of logic cells are essential to correctly analyze and predict the performance of upcoming technologies. A simulation flow for DTCO is presented here, which combines the accuracy of TCAD with the performance of SPICE-utilizing parasitic extractions, the impedance field method for variations, and the compact-physics simulator Comphy for reliability. Good agreement with experimental RO performance of iN14 is demonstrated and projections to N3 FinFET and nanosheet technologies are made.
Rzepa, G, Karner, M, Baumgartner, O, Strof, G, Schanovsky, F, Mitterbauer, F, Kernstock, C, Karner, HW, Weckx, P, Hellings, G, Claes, D, Wu, Z, Xiang, Y, Chiarella, T, Parvais, B, Mitard, J, Franco, J, Kaczer, B, Linten, D & Stanojevic, Z 2021, Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. in 2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings., 9405172, IEEE International Reliability Physics Symposium Proceedings, vol. 2021-March, Institute of Electrical and Electronics Engineers Inc., 2021 IEEE International Reliability Physics Symposium, IRPS 2021, Virtual, Monterey, United States, 21/03/21. https://doi.org/10.1109/IRPS46558.2021.9405172
Rzepa, G., Karner, M., Baumgartner, O., Strof, G., Schanovsky, F., Mitterbauer, F., Kernstock, C., Karner, H. W., Weckx, P., Hellings, G., Claes, D., Wu, Z., Xiang, Y., Chiarella, T., Parvais, B., Mitard, J., Franco, J., Kaczer, B., Linten, D., & Stanojevic, Z. (2021). Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. In 2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings Article 9405172 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2021-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS46558.2021.9405172
@inproceedings{a8551cc18260488b836f3e5a7d3e824f,
title = "Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies",
abstract = "Reliability and variability-aware simulations of logic cells are essential to correctly analyze and predict the performance of upcoming technologies. A simulation flow for DTCO is presented here, which combines the accuracy of TCAD with the performance of SPICE-utilizing parasitic extractions, the impedance field method for variations, and the compact-physics simulator Comphy for reliability. Good agreement with experimental RO performance of iN14 is demonstrated and projections to N3 FinFET and nanosheet technologies are made. ",
keywords = "bias temperature instabilities, high-k dielectric materials, nanosheets, semiconductor device modeling, semiconductor device reliability",
author = "G. Rzepa and M. Karner and O. Baumgartner and G. Strof and F. Schanovsky and F. Mitterbauer and C. Kernstock and Karner, {H. W.} and P. Weckx and G. Hellings and D. Claes and Z. Wu and Y. Xiang and T. Chiarella and B. Parvais and J. Mitard and J. Franco and B. Kaczer and D. Linten and Z. Stanojevic",
year = "2021",
month = mar,
doi = "10.1109/IRPS46558.2021.9405172",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings",
address = "United States",
note = "2021 IEEE International Reliability Physics Symposium, IRPS 2021 ; Conference date: 21-03-2021 Through 24-03-2021",
}