Kim, S., Kim, J., Jang, D., Ritzenthaler, R., Parvais, B., Mitard, J., Mertens, H., Chiarella, T., Horiguchi, N., & Lee, J. W. (2020). Comparison of temperature dependent carrier transport in FinFET and gate-all-around nanowire FET. Applied Sciences (Switzerland), 10(8), Article 2979. https://doi.org/10.3390/APP10082979

@article{3a5bcb53d5c949029c80d25f9b4f4d94,
title = "Comparison of temperature dependent carrier transport in FinFET and gate-all-around nanowire FET",
abstract = "The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatures (25-125 °C). A similar temperature dependence of threshold voltage (VTH) and subthreshold swing (SS) is observed for both devices. However, effective mobility (μeff) shows significant differences of temperature dependence between GAA NW-FET and FinFET at a high gate effective field. At weak Ninv (= 5 x 1012 cm2/V. s), both GAA NW-FET and FinFET are mainly limited by phonon scattering in μeff. On the other hand, at strong Ninv (= 1.5 x 1013 cm2/V. s), GAA NW-FET shows 10 times higher dμeff/dT and 1.6 times smaller mobility degradation coefficient (ff) than FinFET. GAA NW-FET is less limited by surface roughness scattering, but FinFET is relatively more limited by surface roughness scattering in carrier transport.",
keywords = "Effective mobility, FinFET, GAA NW-FET, Surface roughness scattering, Temperature dependence",
author = "Soohyun Kim and Jungchun Kim and Doyoung Jang and Romain Ritzenthaler and Bertrand Parvais and Jerome Mitard and Hans Mertens and Thomas Chiarella and Naoto Horiguchi and Lee, {Jae Woo}",
year = "2020",
month = apr,
day = "24",
doi = "10.3390/APP10082979",
language = "English",
volume = "10",
journal = "Applied Sciences (Switzerland)",
issn = "2076-3417",
publisher = "MDPI",
number = "8",
}