Syshchyk, O., Hsu, B., Yu, H., Motsnyi, V., Vais, A., Kunert, B., Mols, Y., Alcotte, R., Puybaret, R., Waldron, N., Soussan, P., Boulenc, P., Karve, G., Simoen, E., Collaert, N., Puers, B., & Van Hoof, C. (2020). Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates. Physical Review Applied, 14(2), Article 024093. https://doi.org/10.1103/PhysRevApplied.14.024093

@article{18a94367aade48538c04a5f0f6b3055d,
title = "Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates",
abstract = "Monolithically integrated GaAs p-i-n diodes are demonstrated on 300-mm Si (001) substrates using a nanoridge-engineering approach. Deep-level transient spectroscopy (DLTS) is used to perform defect analysis for nanoridge and planar GaAs diodes. The point defect, EL2 with NT≃3×1014cm-3, is observed for nanoridge p-i-n diodes. A methodology is developed to extract the surface-state density (NSS) directly from the DLTS spectrum. GaAs nanoridge diodes show NSS≃2×1013cm-2 compared to planar diode approximately 6.5×1012cm-2. A clear correlation is observed between dark current and defect density. An investigation on the impact of an in situ and ex situ passivation layers on the leakage current reduction is performed for GaAs p-i-n diodes.",
author = "O. Syshchyk and B. Hsu and H. Yu and V. Motsnyi and A. Vais and B. Kunert and Y. Mols and R. Alcotte and R. Puybaret and N. Waldron and P. Soussan and P. Boulenc and G. Karve and E. Simoen and N. Collaert and B. Puers and {Van Hoof}, C.",
note = "Publisher Copyright: {\textcopyright} 2020 American Physical Society.",
year = "2020",
month = aug,
doi = "10.1103/PhysRevApplied.14.024093",
language = "English",
volume = "14",
journal = "Physical Review Applied",
issn = "2331-7019",
publisher = "American Physical Society",
number = "2",
}