GaN-channel based transistors are ideally suited for RF/5G applications and also provide the promise of monolithic integration on a conventional Si-platform. Due to the wide scope of high electron mobility GaN transistor architectures, their reliability assessment is essential to ensure their successful deployment in low-power applications such as mobile computing devices, as well as high-power applications such as autonomous vehicles and base stations. We identify the most important DCreliability metrics necessary for fair benchmarking of future GaNon-Si RF transistors. A detailed analysis of the shortlisted DCreliability parameters for three device types, namely MOSFETs, MOSHEMTs/MISHEMTs and HEMTs is presented. MOSHEMT/MISHEMT is identified as the most robust device architecture, due to the presence of a barrier layer alleviating the impact of certain degradation mechanisms. Defect distributions in the gate-stack of MOS devices are extracted using defect band modelling technique. MOSHEMT devices are shown to undergo negative and positive Bias Temperature Instability (BTI) under specific ranges of positive gate-overdrive, thereby demonstrating the importance of correctly estimating the oxide field for MOSHEMT devices. Degradation map methodology is partially developed to distinguish the different gate-oxide degradation mechanisms and model the device lifetime pertaining to each of the mechanisms.
Putcha, V, Bury, E, Franco, J, Walke, A, Zhao, SE, Peralagu, U, Zhao, M, Alian, A, Kaczer, B, Waldron, N, Linten, D, Parvais, B & Collaert, N 2020, Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. in 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings., 9129251, IEEE International Reliability Physics Symposium Proceedings, vol. 2020-April, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Virtual, Online, United States, 28/04/20. https://doi.org/10.1109/IRPS45951.2020.9129251
Putcha, V., Bury, E., Franco, J., Walke, A., Zhao, S. E., Peralagu, U., Zhao, M., Alian, A., Kaczer, B., Waldron, N., Linten, D., Parvais, B., & Collaert, N. (2020). Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings Article 9129251 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2020-April). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS45951.2020.9129251
@inproceedings{5e6e7887550f4167860a9e34d8c02c83,
title = "Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications",
abstract = "GaN-channel based transistors are ideally suited for RF/5G applications and also provide the promise of monolithic integration on a conventional Si-platform. Due to the wide scope of high electron mobility GaN transistor architectures, their reliability assessment is essential to ensure their successful deployment in low-power applications such as mobile computing devices, as well as high-power applications such as autonomous vehicles and base stations. We identify the most important DCreliability metrics necessary for fair benchmarking of future GaNon-Si RF transistors. A detailed analysis of the shortlisted DCreliability parameters for three device types, namely MOSFETs, MOSHEMTs/MISHEMTs and HEMTs is presented. MOSHEMT/MISHEMT is identified as the most robust device architecture, due to the presence of a barrier layer alleviating the impact of certain degradation mechanisms. Defect distributions in the gate-stack of MOS devices are extracted using defect band modelling technique. MOSHEMT devices are shown to undergo negative and positive Bias Temperature Instability (BTI) under specific ranges of positive gate-overdrive, thereby demonstrating the importance of correctly estimating the oxide field for MOSHEMT devices. Degradation map methodology is partially developed to distinguish the different gate-oxide degradation mechanisms and model the device lifetime pertaining to each of the mechanisms.",
keywords = "buffer breakdown, buffer dispersion, DC-reliability, device breakdown, device lifetime., GaN, RF/5G applications",
author = "V. Putcha and E. Bury and J. Franco and A. Walke and Zhao, {S. E.} and U. Peralagu and M. Zhao and A. Alian and B. Kaczer and N. Waldron and D. Linten and B. Parvais and N. Collaert",
year = "2020",
month = apr,
doi = "10.1109/IRPS45951.2020.9129251",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings",
address = "United States",
note = "2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference date: 28-04-2020 Through 30-05-2020",
}