Zong, Z., Mangraviti, G., & Wambacq, P. (2020). Low 1/f(3) Noise Corner LC-VCO Design Using Flicker Noise Filtering Technique in 22nm FD-SOI. IEEE Transactions on Circuits and Systems I: Regular Papers, 67(5), 1469-1480. Article 9014529. https://doi.org/10.1109/TCSI.2020.2970267

@article{c3b52ccba1124bee8df9890ddee7b498,
title = "Low 1/f(3) Noise Corner LC-VCO Design Using Flicker Noise Filtering Technique in 22nm FD-SOI",
abstract = "This paper presents a K/Ka-band voltage biased differential LC-VCO in 22nm FD-SOI achieving a 1/f3 corner below 18 kHz and a figure-of-merit (FOM) at 1 MHz offset frequency of 188190 dBc/Hz over the tuning range. Thanks to the flicker noise filtering technique, flicker noise upconversion can be suppressed significantly without degrading the phase noise (PN) in the 1/f2 region. The difference in connection of the switched-capacitor bank (SCB) over the VCO tuning range is taken into account in our analysis of flicker noise filtering. The VCO uses differential source degeneration with a self-coupled inductor that is used for layout compactness and common-mode (CM) resonance manipulation. To obtain a low 1/f3 corner over the tuning range, a common centroid layout technique is used for the SCB. The post-layout simulation shows that the 1/f3 corner is well below 50 kHz over the tuning range in different process corners. The PN@1 MHz and PN@100 kHz are-110.2 dBc/Hz and-89.9 dBc/Hz, respectively, at the center of the tuning range with a power consumption of 8.8 mW.",
keywords = "K/Ka-band, LC-VCO, flicker noise suppression, FD-SOI",
author = "Zhiwei Zong and Giovanni Mangraviti and Piet Wambacq",
year = "2020",
month = may,
doi = "10.1109/TCSI.2020.2970267",
language = "English",
volume = "67",
pages = "1469--1480",
journal = "IEEE Transactions on Circuits and Systems I: Regular Papers",
issn = "1549-8328",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}