Simoen, E., Hsu, P. C. B., Yu, H., Wang, H., Zhao, M., Takakura, K., Putcha, V., Peralagu, U., Parvais, B., Waldron, N., & Collaert, N. (2020). Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications. In S. Yu, X. Zhu, & T.-A. Tang (Eds.), 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings Article 9278262 (2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT49897.2020.9278262

@inproceedings{cbdf9a7621114367992a8c73e2205eb6,
title = "Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications",
abstract = "This paper describes the application of Deep Level Transient Spectroscopy and Generation-Recombination Noise Spectroscopy to the study of trap levels in III-V and III-N materials and devices.",
author = "Eddy Simoen and Hsu, {Po Chun Brent} and Hao Yu and Hongyue Wang and Ming Zhao and Kenichiro Takakura and Vamsi Putcha and Uthayasankaran Peralagu and Bertrand Parvais and Niamh Waldron and Nadine Collaert",
year = "2020",
month = nov,
day = "3",
doi = "10.1109/ICSICT49897.2020.9278262",
language = "English",
series = "2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Shaofeng Yu and Xiaona Zhu and Ting-Ao Tang",
booktitle = "2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings",
address = "United States",
note = "15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 ; Conference date: 03-11-2020 Through 06-11-2020",
}