2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings
The low-frequency noise of input-output (I/O) FinFETs with 3.5 nm and 5nm SiO2 gate dielectric is studied for different processing conditions. For the thin dielectric a high-pressure (HP) deuterium anneal can improve the noise Power Spectral Density (PSD). There is no significant impact on n-channel devices, while a pronounced effect is observed for p-channel devices, especially for a HP anneal at 400 °C and 20 atm. Results are also presented on the use of a Si/SiGe superlattice architecture and it is shown that the same gate stack quality as for standard devices can be maintained.
Claeys, C, Hellings, G, Arimura, H , Parvais, B , Ragnarsson, LA, Dekkers, H, Schram, T, Linten, D, Horiguchi, N, Simoen, E, Boudier, D & Cretu, B 2020, Technology Impact on the Low Frequency Noise of Si and Si/SiGe Superlattice Input-Output FinFETs . in S Yu, X Zhu & T-A Tang (eds), 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings. , 9278221, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020, Virtual, Kunming, China, 3/11/20 .
Claeys, C., Hellings, G., Arimura, H. , Parvais, B. , Ragnarsson, L. A., Dekkers, H., Schram, T., Linten, D., Horiguchi, N., Simoen, E., Boudier, D., & Cretu, B. (2020). Technology Impact on the Low Frequency Noise of Si and Si/SiGe Superlattice Input-Output FinFETs . In S. Yu, X. Zhu, & T-A. Tang (Eds.), 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings [9278221] (2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings). Institute of Electrical and Electronics Engineers Inc..
@inproceedings{6035432a1713414896bae20bbed24481,
title = " Technology Impact on the Low Frequency Noise of Si and Si/SiGe Superlattice Input-Output FinFETs " ,
abstract = " The low-frequency noise of input-output (I/O) FinFETs with 3.5 nm and 5nm SiO2 gate dielectric is studied for different processing conditions. For the thin dielectric a high-pressure (HP) deuterium anneal can improve the noise Power Spectral Density (PSD). There is no significant impact on n-channel devices, while a pronounced effect is observed for p-channel devices, especially for a HP anneal at 400 °C and 20 atm. Results are also presented on the use of a Si/SiGe superlattice architecture and it is shown that the same gate stack quality as for standard devices can be maintained. " ,
author = " Cor Claeys and Geert Hellings and Hiroaki Arimura and Bertrand Parvais and Ragnarsson, {Lars Ake} and Harold Dekkers and Tom Schram and Dimitri Linten and Naoto Horiguchi and Eddy Simoen and Dimitri Boudier and Bogdan Cretu " ,
year = " 2020 " ,
month = nov,
day = " 3 " ,
doi = " 10.1109/ICSICT49897.2020.9278221 " ,
language = " English " ,
series = " 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings " ,
publisher = " Institute of Electrical and Electronics Engineers Inc. " ,
editor = " Shaofeng Yu and Xiaona Zhu and Ting-Ao Tang " ,
booktitle = " 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings " ,
address = " United States " ,
note = " 15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 Conference date: 03-11-2020 Through 06-11-2020 " ,
}