We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (RC) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (VBD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μFE), >2000 cm2/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.
Peralagu, U, De Jaeger, B, Fleetwood, DM, Wambacq, P, Zhao, M, Parvais, B, Waldron, N, Collaert, N, Alian, A, Putcha, V, Khaled, A, Rodriguez, R, Sibaja-Hernandez, A, Chang, S, Simoen, E & Zhao, SE 2019, CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance. in Proceedings of the 2019 IEEE International Electron Devices Meeting., 8993582, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., pp. 17.2.1-17.2.4, 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 7/12/19. https://doi.org/10.1109/IEDM19573.2019.8993582
Peralagu, U., De Jaeger, B., Fleetwood, D. M., Wambacq, P., Zhao, M., Parvais, B., Waldron, N., Collaert, N., Alian, A., Putcha, V., Khaled, A., Rodriguez, R., Sibaja-Hernandez, A., Chang, S., Simoen, E., & Zhao, S. E. (2019). CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance. In Proceedings of the 2019 IEEE International Electron Devices Meeting (pp. 17.2.1-17.2.4). Article 8993582 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993582
@inproceedings{939144372ffa42d7821b9863dde221ba,
title = "CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance",
abstract = "We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (RC) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (VBD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μFE), >2000 cm2/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.",
author = "U. Peralagu and {De Jaeger}, B. and Fleetwood, {D. M.} and P. Wambacq and M. Zhao and B. Parvais and N. Waldron and N. Collaert and A. Alian and V. Putcha and A. Khaled and R. Rodriguez and A. Sibaja-Hernandez and S. Chang and E. Simoen and Zhao, {S. E.}",
year = "2019",
month = dec,
doi = "10.1109/IEDM19573.2019.8993582",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "17.2.1--17.2.4",
booktitle = "Proceedings of the 2019 IEEE International Electron Devices Meeting",
address = "United States",
note = "65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",
}