This paper describes the design of a 28 GHz power amplifier (PA) in a commercial GaAs mHEMT technology using concepts that are typical for mm-wave CMOS design. Simulations show a 1dB output compression point of around 23 dBm with a 30% power-added efficiency (PAE) at 28 GHz, while providing a gain of 12 dB. Comparison with the performance of a similar 28 GHz fully-depleted Silicon-On-Insulator (FDSOI) PA shows an increase of the compression point with 10 dB while efficiency is comparable. The high compression point of this GaAsPA offers a margin for system optimization such as a reduction of the number of antennas for beamforming.
Yan, D, Ingels, M, Mangraviti, G, Liu, Y, Parvais, B, Waldron, N, Collaert, N & Wambacq, P 2019, Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications. in 17th IEEE International New Circuits and Systems Conference, NEWCAS 2019., 8961233, 17th IEEE International New Circuits and Systems Conference, NEWCAS 2019, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International New Circuits and Systems Conference, NEWCAS 2019, Munich, Germany, 23/06/19. https://doi.org/10.1109/NEWCAS44328.2019.8961233
Yan, D., Ingels, M., Mangraviti, G., Liu, Y., Parvais, B., Waldron, N., Collaert, N., & Wambacq, P. (2019). Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications. In 17th IEEE International New Circuits and Systems Conference, NEWCAS 2019 Article 8961233 (17th IEEE International New Circuits and Systems Conference, NEWCAS 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEWCAS44328.2019.8961233
@inproceedings{774f7a8577d24035b9f7b379089ee72b,
title = "Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications",
abstract = "This paper describes the design of a 28 GHz power amplifier (PA) in a commercial GaAs mHEMT technology using concepts that are typical for mm-wave CMOS design. Simulations show a 1dB output compression point of around 23 dBm with a 30% power-added efficiency (PAE) at 28 GHz, while providing a gain of 12 dB. Comparison with the performance of a similar 28 GHz fully-depleted Silicon-On-Insulator (FDSOI) PA shows an increase of the compression point with 10 dB while efficiency is comparable. The high compression point of this GaAsPA offers a margin for system optimization such as a reduction of the number of antennas for beamforming.",
keywords = "28GHz, 5G, FD-SOI, GaAs",
author = "Dongyang Yan and Mark Ingels and Giovanni Mangraviti and Yao Liu and Bertrand Parvais and Niamh Waldron and Nadine Collaert and Piet Wambacq",
year = "2019",
month = jun,
day = "1",
doi = "10.1109/NEWCAS44328.2019.8961233",
language = "English",
series = "17th IEEE International New Circuits and Systems Conference, NEWCAS 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "17th IEEE International New Circuits and Systems Conference, NEWCAS 2019",
address = "United States",
note = "17th IEEE International New Circuits and Systems Conference, NEWCAS 2019 ; Conference date: 23-06-2019 Through 26-06-2019",
}