High-speed wireless communication in the post-5G era will likely make use of frequency bands above 100 GHz. This poses challenges to IC design in silicon technologies. This paper presents a general comparison of a D-band transformer-based Class-AB power amplifier with cross-coupled capacitive neutralization in three advanced silicon technologies: bulk CMOS, fullydepleted SOI, and SiGe BiCMOS. Each of these technologies has its own prospects and disadvantages. A comparison of performance parameters is made such as the maximum available power gain Gmax , saturation power Psat , drain efficiency DE and power added efficiency PAE after properly sizing the transistors to reach an optimum load resistance Ropt . Further, a 140 GHz 4-stage power amplifier is fabricated in a 28 nm bulk CMOS process as a reference. Its design considerations, layout parasitics analysis, and layout techniques are discussed as well.
Tang, X, Medra, A, Nguyen, JH-D, Khalaf, K, Debaillie, B & Wambacq, P 2019, Design of A D-band Transformer-Based Neutralized Class-AB Power Amplifier in Silicon Technologies. in 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS). IEEE, pp. 1-4, 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), Munich, Germany, 23/06/19. https://doi.org/10.1109/NEWCAS44328.2019.8961277
Tang, X., Medra, A., Nguyen, J. H.-D., Khalaf, K., Debaillie, B., & Wambacq, P. (2019). Design of A D-band Transformer-Based Neutralized Class-AB Power Amplifier in Silicon Technologies. In 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS) (pp. 1-4). IEEE. https://doi.org/10.1109/NEWCAS44328.2019.8961277
@inproceedings{241387b3fba0445eb9f727afeccbfef1,
title = "Design of A D-band Transformer-Based Neutralized Class-AB Power Amplifier in Silicon Technologies",
abstract = "High-speed wireless communication in the post-5G era will likely make use of frequency bands above 100 GHz. This poses challenges to IC design in silicon technologies. This paper presents a general comparison of a D-band transformer-based Class-AB power amplifier with cross-coupled capacitive neutralization in three advanced silicon technologies: bulk CMOS, fullydepleted SOI, and SiGe BiCMOS. Each of these technologies has its own prospects and disadvantages. A comparison of performance parameters is made such as the maximum available power gain Gmax , saturation power Psat , drain efficiency DE and power added efficiency PAE after properly sizing the transistors to reach an optimum load resistance Ropt . Further, a 140 GHz 4-stage power amplifier is fabricated in a 28 nm bulk CMOS process as a reference. Its design considerations, layout parasitics analysis, and layout techniques are discussed as well.",
author = "Xinyan Tang and Alaaeldien Medra and Nguyen, {Johan Hoang-Dung} and Khaled Khalaf and Bjorn Debaillie and Piet Wambacq",
year = "2019",
month = jun,
day = "23",
doi = "10.1109/NEWCAS44328.2019.8961277",
language = "English",
isbn = "978-1-7281-1032-5",
pages = "1--4",
booktitle = "2019 17th IEEE International New Circuits and Systems Conference (NEWCAS)",
publisher = "IEEE",
note = "2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), NEWCAS ; Conference date: 23-06-2019 Through 26-06-2019",
url = "https://www.newcas2019.org/",
}