In this paper, we report the characterization and modeling of multi-finger gate all around (GAA) nanowire (NW) FETs (NWFETs) from dc to 14 GHz. The self-heating effect (SHE) in NWFETs is investigated experimentally using the small-signal output conductance ( g ds} ) technique. The frequency-dependent complex thermal impedance, Z thf) , is extracted by fitting an n th-order thermal network with the experimental data. We show that the temperature rise Δ T (=85 °C) due to SHE is significant in short-channel silicon on insulator (SOI) NWFETs. Finally, we have evaluated the RF figure of merit (FOM) for these NWFETs as fT (=70 GHz) and f max (=80 GHz). We also report the RF performance metric sensitivity on temperature, partial f max/\partial T amb ( approx -0.104 GHz/K). The reported BSIM-CMG compact model shows a good correlation with the measurement data.
Singh, R, Aditya, K, Veloso, A, Parvais, B & Dixit, A 2019, 'Experimental Evaluation of Self-Heating and Analog/RF FOM in GAA-Nanowire FETs', IEEE Transactions on Electron Devices, vol. 66, no. 8, 8758332, pp. 3279-3285. https://doi.org/10.1109/TED.2019.2924439
Singh, R., Aditya, K., Veloso, A., Parvais, B., & Dixit, A. (2019). Experimental Evaluation of Self-Heating and Analog/RF FOM in GAA-Nanowire FETs. IEEE Transactions on Electron Devices, 66(8), 3279-3285. Article 8758332. https://doi.org/10.1109/TED.2019.2924439
@article{7c067b2585d441208772bac1561d8585,
title = "Experimental Evaluation of Self-Heating and Analog/RF FOM in GAA-Nanowire FETs",
abstract = "In this paper, we report the characterization and modeling of multi-finger gate all around (GAA) nanowire (NW) FETs (NWFETs) from dc to 14 GHz. The self-heating effect (SHE) in NWFETs is investigated experimentally using the small-signal output conductance ( g ds} ) technique. The frequency-dependent complex thermal impedance, Z thf) , is extracted by fitting an n th-order thermal network with the experimental data. We show that the temperature rise Δ T (=85 °C) due to SHE is significant in short-channel silicon on insulator (SOI) NWFETs. Finally, we have evaluated the RF figure of merit (FOM) for these NWFETs as fT (=70 GHz) and f max (=80 GHz). We also report the RF performance metric sensitivity on temperature, partial f max/\partial T amb ( approx -0.104 GHz/K). The reported BSIM-CMG compact model shows a good correlation with the measurement data. ",
author = "Ramendra Singh and Kritika Aditya and Anabela Veloso and Bertrand Parvais and Abhisek Dixit",
year = "2019",
month = aug,
doi = "10.1109/TED.2019.2924439",
language = "English",
volume = "66",
pages = "3279--3285",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}