In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BVCBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.
Vais, A, Alcotte, R, Ingels, M, Wambacq, P, Parvais, B, Langer, R, Kunert, B, Waldron, N, Collaert, N, Witters, L, Mols, Y, Hernandez, AS, Walke, A, Yu, H, Baryshnikova, M, Mannaert, G & Deshpande, V 2019, First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993539, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., pp. 178-181, 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 7/12/19. https://doi.org/10.1109/IEDM19573.2019.8993539
Vais, A., Alcotte, R., Ingels, M., Wambacq, P., Parvais, B., Langer, R., Kunert, B., Waldron, N., Collaert, N., Witters, L., Mols, Y., Hernandez, A. S., Walke, A., Yu, H., Baryshnikova, M., Mannaert, G., & Deshpande, V. (2019). First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 (pp. 178-181). Article 8993539 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993539
@inproceedings{21da516a8dcc4c28b49c78f235fc8085,
title = "First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering",
abstract = "In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BVCBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.",
author = "A. Vais and R. Alcotte and M. Ingels and P. Wambacq and B. Parvais and R. Langer and B. Kunert and N. Waldron and N. Collaert and L. Witters and Y. Mols and Hernandez, {A. S.} and A. Walke and H. Yu and M. Baryshnikova and G. Mannaert and V. Deshpande",
year = "2019",
month = dec,
doi = "10.1109/IEDM19573.2019.8993539",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "178--181",
booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",
address = "United States",
note = "65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",
}