In this article, we explore different device and standard cell architectures for scaling the Germanium fin field-effect transistor (FinFET) and nanosheet (NS) at the sub-5-nm node. It is demonstrated that the Germanium device provides approximately 70% improvement in drive current and 3.4 × less device resistance. The main concern for Germanium devices remains the high leakage current due to the gate-induced drain leakage, which limits their usage to high-speed applications. Overall, Germanium devices require fewer boosters than silicon to scale beyond the 5-nm node. Contact resistivity is found to be a critical knob for Germanium and it can be relaxed to 3e-9 Ω-cm 2 to meet the power and performance targets for the sub-5-nm node. Moving to the NS helps in relaxing this constraint further.
Sharan, N, Eneman, G, Collaert, N, Parvais, B, Spessot, A, Mocuta, A, Shaik, KA, Jang, D, Schuddinck, P, Yakimets, D, Bardon, MG, Mitard, J, Arimura, H & Bufler, FM 2019, 'Ge Devices: A Potential Candidate for Sub-5-nm Nodes?', IEEE Transactions on Electron Devices, vol. 66, no. 11, 8868097, pp. 4997-5002. https://doi.org/10.1109/TED.2019.2944336
Sharan, N., Eneman, G., Collaert, N., Parvais, B., Spessot, A., Mocuta, A., Shaik, K. A., Jang, D., Schuddinck, P., Yakimets, D., Bardon, M. G., Mitard, J., Arimura, H., & Bufler, F. M. (2019). Ge Devices: A Potential Candidate for Sub-5-nm Nodes? IEEE Transactions on Electron Devices, 66(11), 4997-5002. Article 8868097. https://doi.org/10.1109/TED.2019.2944336
@article{3246e329ad1245ce9aa6cc6faf90ee91,
title = "Ge Devices: A Potential Candidate for Sub-5-nm Nodes?",
abstract = "In this article, we explore different device and standard cell architectures for scaling the Germanium fin field-effect transistor (FinFET) and nanosheet (NS) at the sub-5-nm node. It is demonstrated that the Germanium device provides approximately 70% improvement in drive current and 3.4 × less device resistance. The main concern for Germanium devices remains the high leakage current due to the gate-induced drain leakage, which limits their usage to high-speed applications. Overall, Germanium devices require fewer boosters than silicon to scale beyond the 5-nm node. Contact resistivity is found to be a critical knob for Germanium and it can be relaxed to 3e-9 Ω-cm 2 to meet the power and performance targets for the sub-5-nm node. Moving to the NS helps in relaxing this constraint further. ",
author = "Neha Sharan and Geert Eneman and Nadine Collaert and Bertrand Parvais and Alessio Spessot and Anda Mocuta and Shaik, {Khaja A.} and Doyoung Jang and Pieter Schuddinck and Dmitry Yakimets and Bardon, {Marie Garcia} and Jerome Mitard and Hiroaki Arimura and Bufler, {Fabian M.}",
year = "2019",
month = nov,
doi = "10.1109/TED.2019.2944336",
language = "English",
volume = "66",
pages = "4997--5002",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}