The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550°C and 940°C, exposing the substrate (1 ) to a nitrogen gas flow. The present invention furthermore provides a structure comprising a monocrystalline GeN layer (4) on a substrate (1 ). The monocrystalline GeN formed by the method according to embodiments of the invention allows passivation of surface states present at the Ge surface (3).
Lieten, R, Degroote, S & Borghs, G, Growth of monocrystalline GeN on a substrate, Patent No. EP2050126B.
Lieten, R., Degroote, S., & Borghs, G. (2019). Growth of monocrystalline GeN on a substrate. (Patent No. EP2050126B). EPO.
@misc{293dc993cd5b45deb99f25a08704a81c,
title = "Growth of monocrystalline GeN on a substrate",
abstract = "The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550°C and 940°C, exposing the substrate (1 ) to a nitrogen gas flow. The present invention furthermore provides a structure comprising a monocrystalline GeN layer (4) on a substrate (1 ). The monocrystalline GeN formed by the method according to embodiments of the invention allows passivation of surface states present at the Ge surface (3).",
author = "Ruben Lieten and Stefan Degroote and Gustaaf Borghs",
year = "2019",
language = "English",
publisher = "EPO",
type = "Patent",
note = "EP2050126B; H01L21/318",
}