The present invention provides a method for providing a crystalline germanium layer on a crystalline base substrate having a crystalline surface. The method comprises cleaning the base substrate for removing contaminants and/or native oxides from the surface, providing an amorphous germanium layer on the surface of the base substrate while exposing to the base substrate to a hydrogen source such as e.g. a hydrogen plasma, a H2 flux or hydrogen originating from dissociation of GeH4 and/or to a non-reactive gas source such as N2, He, Ne, Ar, Kr, Xe, Rn or mixtures thereof, and crystallising the amorphous germanium layer by annealing the base substrate so as to provide a crystalline germanium layer. The present invention also provides a method for the production of a photovoltaic cell or a photo-electrolysis cell or for forming a CMOS device by using the method according to embodiments of the invention and a substrate comprising a crystalline germanium layer formed by a method according to embodiments of the invention.
Lieten, R & Degroote, S, Method for providing a crystalline germanium layer on a substrate, Patent No. EP2167701B.
Lieten, R., & Degroote, S. (2019). Method for providing a crystalline germanium layer on a substrate. (Patent No. EP2167701B). EPO.
@misc{c6a01850266a443881a6861bbab7e1b1,
title = "Method for providing a crystalline germanium layer on a substrate",
abstract = "The present invention provides a method for providing a crystalline germanium layer on a crystalline base substrate having a crystalline surface. The method comprises cleaning the base substrate for removing contaminants and/or native oxides from the surface, providing an amorphous germanium layer on the surface of the base substrate while exposing to the base substrate to a hydrogen source such as e.g. a hydrogen plasma, a H2 flux or hydrogen originating from dissociation of GeH4 and/or to a non-reactive gas source such as N2, He, Ne, Ar, Kr, Xe, Rn or mixtures thereof, and crystallising the amorphous germanium layer by annealing the base substrate so as to provide a crystalline germanium layer. The present invention also provides a method for the production of a photovoltaic cell or a photo-electrolysis cell or for forming a CMOS device by using the method according to embodiments of the invention and a substrate comprising a crystalline germanium layer formed by a method according to embodiments of the invention.",
author = "Ruben Lieten and Stefan Degroote",
year = "2019",
language = "English",
publisher = "EPO",
type = "Patent",
note = "EP2167701B; C23C14/06,C23C14/58,C23C16/28,C23C16/56,C30B1/02,C30B29/08,H01L21/20",
}