We present a kinetics-based analysis of the steep slope operation of ferroelectric (FE) FETs built on (i) a statistical multidomain nucleation-propagation mechanism of FE polarization switching and (ii) charge trapping in the high- K FE oxide. With a hardware-validated compact model we predict the change in hysteresis direction, the steep slope and the transient behaviors observed in our I-V measurements on Hf0 5Zr0 5O2-based planar n-FEFETs. We find that the proposed field-independent propagation is essential in explaining the measured reverse-sweep steep slope and transient current drift. Furthermore, the model suggests that a higher polarization and accordingly a larger I-V hysteresis are induced upon increased trapping. Finally, we show that for hafnia-based FE oxides, reliability engineering of defect band is needed for obtaining steep slope in scaled logic-FEFETs.
Xiang, Y, Verhulst, AS, Parvais, B, Horiguchi, N, Groeseneken, G, Houdt, JV, Bardon, MG, Alam, MNK, Thesberg, M, Kaczer, B, Roussel, P, Popovici, MI, Ragnarsson, LA & Truijen, B 2019, Physical Insights on Steep Slope FEFETs including Nucleation-Propagation and Charge Trapping. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993492, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 7/12/19. https://doi.org/10.1109/IEDM19573.2019.8993492
Xiang, Y., Verhulst, A. S., Parvais, B., Horiguchi, N., Groeseneken, G., Houdt, J. V., Bardon, M. G., Alam, M. N. K., Thesberg, M., Kaczer, B., Roussel, P., Popovici, M. I., Ragnarsson, L. A., & Truijen, B. (2019). Physical Insights on Steep Slope FEFETs including Nucleation-Propagation and Charge Trapping. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 Article 8993492 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993492
@inproceedings{98ad3db369f341f68231aecee13fceea,
title = "Physical Insights on Steep Slope FEFETs including Nucleation-Propagation and Charge Trapping",
abstract = "We present a kinetics-based analysis of the steep slope operation of ferroelectric (FE) FETs built on (i) a statistical multidomain nucleation-propagation mechanism of FE polarization switching and (ii) charge trapping in the high- K FE oxide. With a hardware-validated compact model we predict the change in hysteresis direction, the steep slope and the transient behaviors observed in our I-V measurements on Hf0 5Zr0 5O2-based planar n-FEFETs. We find that the proposed field-independent propagation is essential in explaining the measured reverse-sweep steep slope and transient current drift. Furthermore, the model suggests that a higher polarization and accordingly a larger I-V hysteresis are induced upon increased trapping. Finally, we show that for hafnia-based FE oxides, reliability engineering of defect band is needed for obtaining steep slope in scaled logic-FEFETs.",
author = "Y. Xiang and Verhulst, {A. S.} and B. Parvais and N. Horiguchi and G. Groeseneken and Houdt, {J. Van} and Bardon, {M. Garcia} and Alam, {Md Nur K.} and M. Thesberg and B. Kaczer and P. Roussel and Popovici, {M. I.} and Ragnarsson, {L. A.} and B. Truijen",
year = "2019",
month = dec,
doi = "10.1109/IEDM19573.2019.8993492",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",
address = "United States",
note = "65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",
}