Advanced scaling and the introduction of new materials in the metal-oxide-semiconductor field-effect transistor (MOSFET) raise concerns about its reliability. Several degradation mechanisms, depending on operating conditions and time, can cause a significant change of the transistor parameters. The transistor area plays a large role when it comes to aging. In large-area MOSFETs, aging appears deterministic, while in small-area devices it is stochastic and convoluted with random telegraph noise. This is analogous to the time-zero random variability, which also reduces as the transistor gate area increases. The scope of this paper is to extend the knowledge of the time-dependent random variability as a function of MOSFET gate area scaling. The goal is to aid the designers in transistor sizing toward a more reliable design. As an example, the impact of time-dependent random variability is illustrated for an analog-to-digital converter.
Simicic, M, Weckx, P, Parvais, B, Roussel, P, Kaczer, B & Gielen, G 2019, 'Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations', IEEE Transactions on very large scale integration (VLSI) Systems, vol. 27, no. 3, 8556027, pp. 601-610. https://doi.org/10.1109/TVLSI.2018.2878841
Simicic, M., Weckx, P., Parvais, B., Roussel, P., Kaczer, B., & Gielen, G. (2019). Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations. IEEE Transactions on very large scale integration (VLSI) Systems, 27(3), 601-610. Article 8556027. https://doi.org/10.1109/TVLSI.2018.2878841
@article{b9617cdf807a4420a3ebbb3fb55f7c84,
title = "Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations",
abstract = "Advanced scaling and the introduction of new materials in the metal-oxide-semiconductor field-effect transistor (MOSFET) raise concerns about its reliability. Several degradation mechanisms, depending on operating conditions and time, can cause a significant change of the transistor parameters. The transistor area plays a large role when it comes to aging. In large-area MOSFETs, aging appears deterministic, while in small-area devices it is stochastic and convoluted with random telegraph noise. This is analogous to the time-zero random variability, which also reduces as the transistor gate area increases. The scope of this paper is to extend the knowledge of the time-dependent random variability as a function of MOSFET gate area scaling. The goal is to aid the designers in transistor sizing toward a more reliable design. As an example, the impact of time-dependent random variability is illustrated for an analog-to-digital converter.",
keywords = "analog design, Analog-to-digital converters (ADC), bias temperature instability (BTI), compound exponential-Poisson distribution, integrated circuit (IC) simulation, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, random telegraph noise, random telegraph noise (RTN), time-dependent variability",
author = "Marko Simicic and Pieter Weckx and Bertrand Parvais and Philippe Roussel and Ben Kaczer and Georges Gielen",
year = "2019",
month = mar,
doi = "10.1109/TVLSI.2018.2878841",
language = "English",
volume = "27",
pages = "601--610",
journal = "IEEE Transactions on very large scale integration (VLSI) Systems",
issn = "1063-8210",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}