A 28-GHz transceiver front-end is implemented in 22-nm FD-SOI technology for 5G communication. The front-end consists of a PA and an LNA, including the functionality of T/R switching. The OP1dB, PAEmax and PAE6dB of the PA are 11.2 dBm, 33.8% and 13.1%, respectively. The NF, gain, and power consumption of the LNA are 4 dB, 17 dB, and 14.5 mW, respectively.
Liu, Y, Mangraviti, G, Hitomi, S, Khalaf, K, Debaillie, B & Wambacq, P 2018, A 28-GHz Transceiver Front-End with T/R Switching Achieving 11.2-dBm OP1dB, 33.8% PAEmax and 4-dB NF in 22-nm FD-SOI for 5G Communication. in SOI-3D-Subthreshold Microelectronics Unified Conference. IEEE, San Francisco.
Liu, Y., Mangraviti, G., Hitomi, S., Khalaf, K., Debaillie, B., & Wambacq, P. (2018). A 28-GHz Transceiver Front-End with T/R Switching Achieving 11.2-dBm OP1dB, 33.8% PAEmax and 4-dB NF in 22-nm FD-SOI for 5G Communication. In SOI-3D-Subthreshold Microelectronics Unified Conference IEEE.
@inproceedings{f58051afd1e749c9ab044960005b335f,
title = "A 28-GHz Transceiver Front-End with T/R Switching Achieving 11.2-dBm OP1dB, 33.8% PAEmax and 4-dB NF in 22-nm FD-SOI for 5G Communication",
abstract = "A 28-GHz transceiver front-end is implemented in 22-nm FD-SOI technology for 5G communication. The front-end consists of a PA and an LNA, including the functionality of T/R switching. The OP1dB, PAEmax and PAE6dB of the PA are 11.2 dBm, 33.8% and 13.1%, respectively. The NF, gain, and power consumption of the LNA are 4 dB, 17 dB, and 14.5 mW, respectively.",
keywords = "RF CMOS, SOI, LNA, Power Amplifier (PA), front end",
author = "Yao Liu and Giovanni Mangraviti and Shinya Hitomi and Khaled Khalaf and Bjorn Debaillie and Piet Wambacq",
year = "2018",
month = oct,
day = "15",
language = "English",
isbn = "978-1-5386-7626-4",
booktitle = "SOI-3D-Subthreshold Microelectronics Unified Conference",
publisher = "IEEE",
}