van Liempd, B., Craninckx, J., & Wambacq, P. (2018). PD-SOI: Enabling Adaptive RF Front-End Modules. In SOI-3D-Subthreshold Microelectronics Unified Conference IEEE.

@inproceedings{1ea95ea7856046d5a80225d5796b943e,
title = "PD-SOI: Enabling Adaptive RF Front-End Modules",
abstract = "Partially depleted silicon-on-insulator (PD-SOI) is a key enabling technology for adaptively tuned RF front-end modules (FEM). Unlike bulk CMOS, thanks to SOI{\textquoteright}s insulating buried-oxide (BOX) layer, switched capacitor banks can allow for large voltage swing and exhibit a high small-signal linearity. This in turn enables LTE standard-proof power and linearity capabilities for tunable duplexers based on electrical-balance duplexers (EBDs) and N-path filters. These building blocks help to reduce the amount of SAW filters typically required in LTE handsets and enable in-band full-duplex (IBFD). This paper presents an overview of work related to tunable FEM in 180nm PD-SOI technology.",
keywords = "RF Circuits, duplexer, SOI, integrated circuit design",
author = "{van Liempd}, Barend and Jan Craninckx and Piet Wambacq",
year = "2018",
month = oct,
day = "15",
language = "English",
isbn = "978-1-5386-7626-4",
booktitle = "SOI-3D-Subthreshold Microelectronics Unified Conference",
publisher = "IEEE",
}