Publication Details
Overview
 
 
David San Segundo Bello, Maarten De Bock, Pierre Boulenc, Roeland Vandebriel, Linkun Wu, Jan Van Olmen, Vezio Malandruccolo, Jan Craninckx, Luc Haspeslagh, Stefano Guerrieri, Maarten Rosmeulen, Jonathan Borremans
 

Chapter in Book/ Report/ Conference proceeding

Abstract 

We have developed a TDI sensor with 7 bands of 256 rows each using imec's CCD-in-CMOS technology. Each band uses individual on-chip sequencers and CCD drivers for the 5.4 µm four-phase TDI pixels. Line-by-line row selection per band, individual band selection and bi-directionality enable multispectral TDI. CCD bands operate continuously and time interleaved, and top or bottom outputs can be connected to shared column-parallel delta-sigma ADCs through a column line. ADC outputs are serialized to 32 1.2V LVDS outputs along with two clock signals. These outputs are capable of running at an aggregate of >50Gb/s using on-chip PLLs. The sensor has been packaged in a ceramic PGA package. As a proof-of-concept, an RGB butcher-brick filter has been applied to the glass lid of the sensor to enable multicolor TDI. The sensor has also been integrated into a custom CoaXPress camera. The TDI sensor chip consumes 2.5W at full speed. Two pixel variations have been used. A high gain pixel achieves 10 electrons rms read noise and a full well of 12800 electrons rms with a conversion gain of 62 µV/e. A low gain pixel achieves 40 electrons rms read noise and a full well of 31600 electrons rms with a conversion gain of 28 µV/e.

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