Singh, R., Kushwaha, P., Ghosh, S., Parvais, B., Chauhan, Y. S., & Dixit, A. (2017). Characterization and modeling of n-channel bulk FinFETs from DC to high frequency. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits (Vol. 2017-January, pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2017.8126567

@inproceedings{e8b7b4b9ffb24dc4a1e0380ea7a03ac5,
title = "Characterization and modeling of n-channel bulk FinFETs from DC to high frequency",
abstract = "RF CMOS technology provides a platform for the production of analog, digital and RF circuits on a single chip for futuristic high-level integration. This facilitates the need for a robust compact model for RF FinFETs to study the circuits in a precise and convenient way. In this paper, we have characterized 14-nm N-channel bulk FinFETs by performing two-port S-parameter measurements. Further, BSIM-CMG model for common multiple gate devices is used to accurately capture the RF behavior of the device.",
keywords = "BSIM-CMG, FinFETs, Modeling, Radio Frequency (RF), S-Parameter Measurement.",
author = "Ramendra Singh and Pragya Kushwaha and Sudip Ghosh and Bertrand Parvais and Chauhan, {Yogesh S.} and Abhisek Dixit",
year = "2017",
month = dec,
day = "1",
doi = "10.1109/EDSSC.2017.8126567",
language = "English",
volume = "2017-January",
pages = "1--2",
booktitle = "EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",
note = "13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 ; Conference date: 18-10-2017 Through 20-10-2017",
}