—Millimeter-wave sensors perform robust and accurateremote motion sensing. We propose a 28 nm CMOS RadarTX that modulates a 79 GHz carrier with a 2 Gsps Pseudo-Noisesequence. The measured modulated output power at 79 GHz in4 GHz BW is higher than 11 dBm (27 C), while the spuriousemissions are below 20 dBc, fully satisfying the spectral maskregulations. The output RF BW where we can lock the injection-lockedLO is 13 GHz. Overall, the TX draws 121 mW froma 0.9 V supply resulting in a record efficiency above 10%. Moreimportantly, the TX is functional up to 125 C still providing morethan 7 dBm output power over the same RF BW.
Giannini, V, Guermandi, D, Shi, Q, Medra, A, Van Thillo, W, Bourdoux, A & Wambacq, P 2014, 'A 79 GHz Phase-Modulated 4 GHz-BW CW Radar Transmitter in 28 nm CMOS', IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 49, no. 12, 14759554, pp. 2925-2937.
Giannini, V., Guermandi, D., Shi, Q., Medra, A., Van Thillo, W., Bourdoux, A., & Wambacq, P. (2014). A 79 GHz Phase-Modulated 4 GHz-BW CW Radar Transmitter in 28 nm CMOS. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 49(12), 2925-2937. Article 14759554.
@article{0817a318a82b43a7a28e508e3859bd9f,
title = "A 79 GHz Phase-Modulated 4 GHz-BW CW Radar Transmitter in 28 nm CMOS",
abstract = "—Millimeter-wave sensors perform robust and accurateremote motion sensing. We propose a 28 nm CMOS RadarTX that modulates a 79 GHz carrier with a 2 Gsps Pseudo-Noisesequence. The measured modulated output power at 79 GHz in4 GHz BW is higher than 11 dBm (27 C), while the spuriousemissions are below 20 dBc, fully satisfying the spectral maskregulations. The output RF BW where we can lock the injection-lockedLO is 13 GHz. Overall, the TX draws 121 mW froma 0.9 V supply resulting in a record efficiency above 10%. Moreimportantly, the TX is functional up to 125 C still providing morethan 7 dBm output power over the same RF BW.",
author = "Vito Giannini and Davide Guermandi and Qixian Shi and Alaaeldien Medra and {Van Thillo}, Wim and Andre Bourdoux and Piet Wambacq",
year = "2014",
language = "English",
volume = "49",
pages = "2925--2937",
journal = "IEEE JOURNAL OF SOLID-STATE CIRCUITS",
issn = "0018-9200",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}