This paper presents a 79GHz variable gain low-noise amplifier (LNA) and power amplifier (PA), both implemented in 28nm CMOS, and measured at temperatures from 27°C to 125°C. The 4-gain steps LNA and the 17dB gain PA are based on a multistage common source neutralized push-pull topology. The LNA achieves a gain of 23.8dB and a noise figure (NF) of 4.9dB, and the PA achieves a maximum power added efficiency (PAE) of 13.8% and a saturated output power (Psat) of 12.3dBm. At 125°C both the LNA and the PA are functional with NF <; 7dB and Psat >11dBm. This paper demonstrates the feasibility of using scaled CMOS technology (28nm) for automotive radars.
Medra, A, Giannini, V, Guermandi, D & Wambacq, P 2014, A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C. in European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th. Institute of Electrical and Electronics Engineers ( IEEE ), pp. 183 - 186, European Solid State Circuits Conference (ESSCIRC), Venice Lido, Italy, 22/09/14.
Medra, A., Giannini, V., Guermandi, D., & Wambacq, P. (2014). A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C. In European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th (pp. 183 - 186). Institute of Electrical and Electronics Engineers ( IEEE ).
@inproceedings{205382cb380341a8b090514a1ef5475e,
title = "A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C",
abstract = "This paper presents a 79GHz variable gain low-noise amplifier (LNA) and power amplifier (PA), both implemented in 28nm CMOS, and measured at temperatures from 27°C to 125°C. The 4-gain steps LNA and the 17dB gain PA are based on a multistage common source neutralized push-pull topology. The LNA achieves a gain of 23.8dB and a noise figure (NF) of 4.9dB, and the PA achieves a maximum power added efficiency (PAE) of 13.8% and a saturated output power (Psat) of 12.3dBm. At 125°C both the LNA and the PA are functional with NF <; 7dB and Psat >11dBm. This paper demonstrates the feasibility of using scaled CMOS technology (28nm) for automotive radars.",
keywords = "LNA, PA, PAE, Automotive radar, 79 GHz, variable gain, TEMPERATURE",
author = "Alaaeldien Medra and Vito Giannini and Davide Guermandi and Piet Wambacq",
year = "2014",
language = "English",
isbn = "978-1-4799-5694-4",
pages = "183 -- 186",
booktitle = "European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th",
publisher = "Institute of Electrical and Electronics Engineers ( IEEE )",
note = "European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 ; Conference date: 22-09-2014 Through 26-09-2014",
}