A three-stage, transformer-coupled class-AB power amplifier (PA) and a super source-follower-based I-Q upconversion mixer are implemented in 40nm LP-CMOS technology. The transmitter (Tx) front-end is designed for multi-Gbps QPSK/QAM-16 signal transmission at 60GHz with improved back-off efficiency. It achieves 5.7% power-added efficiency (PAE) at 5dB back-off with a total power consumption of only 90mW. Power gain and output 1dB compression point (P-1dB) are 22dB and 10.2dBm, respectively. A second Tx front-end, based on a class-A PA and Gilbert-cell upconversion mixer, is designed as a benchmark for comparison. With a similar value of P-1dB, PAE of the class-AB prototype at 5dB back-off is three times higher and the total power consumption is 100mW lower than the benchmark Tx.
Khalaf, K, Vidojkovic, V, Vaesen, K, Parvais, B, Long, J & Wambacq, P 2013, 60GHz Transmitter Front-End in 40nm LP-CMOS with Improved Back-Off Efficiency. in 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, IEEE, pp. 6-8, Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on, Austin, United States, 21/01/13. <http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6489414&tag=1>
Khalaf, K., Vidojkovic, V., Vaesen, K., Parvais, B., Long, J., & Wambacq, P. (2013). 60GHz Transmitter Front-End in 40nm LP-CMOS with Improved Back-Off Efficiency. In 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 6-8). (2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems). IEEE. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6489414&tag=1
@inproceedings{fa2ca19de56b4801b9dced2bd37644bc,
title = "60GHz Transmitter Front-End in 40nm LP-CMOS with Improved Back-Off Efficiency",
abstract = "A three-stage, transformer-coupled class-AB power amplifier (PA) and a super source-follower-based I-Q upconversion mixer are implemented in 40nm LP-CMOS technology. The transmitter (Tx) front-end is designed for multi-Gbps QPSK/QAM-16 signal transmission at 60GHz with improved back-off efficiency. It achieves 5.7% power-added efficiency (PAE) at 5dB back-off with a total power consumption of only 90mW. Power gain and output 1dB compression point (P-1dB) are 22dB and 10.2dBm, respectively. A second Tx front-end, based on a class-A PA and Gilbert-cell upconversion mixer, is designed as a benchmark for comparison. With a similar value of P-1dB, PAE of the class-AB prototype at 5dB back-off is three times higher and the total power consumption is 100mW lower than the benchmark Tx.",
keywords = "CMOS, Millimeter wave integrated circuits, mixers, power amplifiers, transmitters",
author = "Khaled Khalaf and Vojkan Vidojkovic and Kristof Vaesen and Bertrand Parvais and John Long and Piet Wambacq",
year = "2013",
month = jan,
day = "21",
language = "English",
isbn = "978-1-4673-1552-4",
series = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",
publisher = "IEEE",
pages = "6--8",
booktitle = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",
note = "Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on ; Conference date: 21-01-2013 Through 23-01-2013",
}