Raczkowski, K., Thijs, S., Tseng, J.-C., Chang, T.-H., Song, M.-H., Linten, D., Nauwelaers, B., & Wambacq, P. (2012). 60 GHz low noise amplifiers with 1 kV CDM protection in 40 nm LP CMOS. In 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems – SiRF (pp. 9-12). IEEE. https://doi.org/10.1109/SiRF.2012.6160126

@inproceedings{58f7f4153fd44137a12b3172b5dde54a,
title = "60 GHz low noise amplifiers with 1 kV CDM protection in 40 nm LP CMOS",
abstract = "This paper describes a set of miniature, three-stage 60 GHz LNAs designed in 40 nm LP CMOS. The designs prove effectiveness and ease of use of inductor-based ESD protection schemes applied to mm-wave circuits. The measured ESD protection levels reach 4.5 kV HBM, up to 7.6 A for VFTLP tests and a record of 1 kV CDM. At the same time, the NF of the LNAs is below 8 dB and the gain above 15 dB at 60 GHz, all at 1.1 V supply. These circuits can effectively be used as input stages of a phased array receiver.",
author = "Kuba Raczkowski and S. Thijs and Jen-Chou Tseng and Tzu-Heng Chang and Ming-Hsiang Song and Dimitri Linten and B. Nauwelaers and Piet Wambacq",
year = "2012",
doi = "10.1109/SiRF.2012.6160126",
language = "English",
isbn = "978-1-4577-1317-0",
pages = "9--12",
booktitle = "12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems – SiRF",
publisher = "IEEE",
note = "12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems ; Conference date: 16-01-2012 Through 18-01-2012",
url = "http://www.silicon-rf.org/",
}