Gaber Mahdi Hussein, W., Wambacq, P., Craninckx, J., & Ingels, M. (2012). A CMOS IQ Digital Doherty Transmitter Using Modulated Tuning Capacitors. In IEEE European Solid-State Circuits Conference (ESSCIRC) (IEEE European Solid-State Circuits Conference (ESSCIRC)).

@inproceedings{77735a22c72842e79109d3a8eb836b1a,
title = "A CMOS IQ Digital Doherty Transmitter Using Modulated Tuning Capacitors",
abstract = "This paper presents a new approach to increase the output power and to enhance the drain efficiency of Direct Digital RF Modulators (DDRM). Two differential four-phase DDRMs are organized in a Doherty-like configuration using two different transformers. The modulated tuning capacitors concept is proposed to achieve a high efficiency at maximum output power and at back-off. To demonstrate this principle, a 2 GHz IQ Digital Doherty Transmitter with on-chip transformers has been integrated in 90 nm CMOS Technology. The digital IQ transmitter achieves a maximum output power of 24.8 dBm with 26% drain efficiency and 26% drain efficiency at 6 dB back-off. With a 10 MHz RFBW multi-tone OFDM signal, the transmitter consumes 176 mA from a 2.4 V supply. It achieves 18.8 dBm RMS output power with 18% average drain efficiency.",
keywords = "CMOS, IQ, DDRM, Doherty, PA, Efficiency",
author = "{Gaber Mahdi Hussein}, Wagdy and Piet Wambacq and Jan Craninckx and Mark Ingels",
year = "2012",
month = sep,
day = "20",
language = "English",
series = "IEEE European Solid-State Circuits Conference (ESSCIRC)",
booktitle = "IEEE European Solid-State Circuits Conference (ESSCIRC)",
note = "ESSCIRC 2012 - 38th European Solid State Circuits Conference ; Conference date: 17-09-2012 Through 21-09-2012",
}