Gaber Mahdi Hussein, W., Wambacq, P., Craninckx, J., & Ingels, M. (2011). A CMOS IQ Direct Digital RF Modulator with Embedded RF FIR-Based Quantization Noise Filter. In IEEE European Solid-State Circuits Conference (ESSCIRC) (pp. 139-142). (IEEE European Solid-State Circuits Conference (ESSCIRC)).

@inproceedings{76be04df18d24365b911ec5546b4049a,
title = "A CMOS IQ Direct Digital RF Modulator with Embedded RF FIR-Based Quantization Noise Filter",
abstract = "This paper presents a new approach to reduce the out of band quantization noise of Direct Digital RF Modulators (DDRM). The DDRM is organized in a FIR-like configuration to filter the quantization noise in the RX band directly at RF. To demonstrate the principle, a 0.9 GHz FIR IQ DDRM has been integrated in 130 nm CMOS. The transmitter achieves more than 22 dB reduction in the quantization noise floor to reach -152 dBc/Hz@20 MHz with a 200 kHz baseband tone. The actual DDRM is capable of both amplitude and phase modulation by using a new four-phases IQ architecture. This results in a reduced power consumption and chip area. The transmitter consumes 94 mW from a 2.7 V supply and achieves an average output power of 9.5 dBm. Leakage into the adjacent channel and into the next one of -35 dB and -53 dB, respectively have been measured for a 10 MHz OFDM signal. It also achieves -27.2 dB EVM with a 64QAM input signal.",
keywords = "DDRM, FIR, IQ, Quantization noise filter",
author = "{Gaber Mahdi Hussein}, Wagdy and Piet Wambacq and Jan Craninckx and Mark Ingels",
year = "2011",
month = sep,
day = "16",
language = "English",
isbn = "978-1-4577-0703-2",
series = "IEEE European Solid-State Circuits Conference (ESSCIRC)",
pages = "139--142",
booktitle = "IEEE European Solid-State Circuits Conference (ESSCIRC)",
note = "Unknown ; Conference date: 16-09-2011",
}